Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US9255331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9255331-B2 |
| Application number | US-201414568384-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2014 |
| Priority date | Sep 11, 2008 |
| Publication date | Feb 9, 2016 |
| Grant date | Feb 9, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An apparatus for a plating process includes: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plate.
Opening claim text (preview).
What is claimed is: 1. A plating apparatus for a plating process, comprising: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plat; wherein a sidewall of the outer chamber circumferentially surrounds the sidewall of the inner chamber. 2. The plating apparatus of claim 1 , wherein the gas supply device is configured to control the temperature of the nonreactive gas to be equal to or higher than a preset plating process temperature. 3. The plating apparatus of claim 1 , further comprising: a gas supply valve configured to control an amount of the nonreactive gas supplied into the outer chamber. 4. The plating apparatus of claim 1 , further comprising: a first gas exhaust pump and a first gas exhaust valve connected with the outer chamber and configured to control an exhaust amount of the nonreactive gas flowing between the outer chamber and the inner chamber. 5. The plating apparatus of claim 1 , further comprising: a second gas exhaust pump and a second gas exhaust valve connected with the inner chamber and configured to control an exhaust amount of the nonreactive gas flowing inside the inner chamber.
using a liquid · CPC title
Control of atmosphere · CPC title
Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells · CPC title
Coating with metals · CPC title
Heating of the substrate · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.