FinFET devices with unique fin shape and the fabrication thereof
US-9548303-B2 · Jan 17, 2017 · US
US11685015B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11685015-B2 |
| Application number | US-201916259856-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 28, 2019 |
| Priority date | Jan 28, 2019 |
| Publication date | Jun 27, 2023 |
| Grant date | Jun 27, 2023 |
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A method of using a polishing system includes securing a wafer in a carrier head, the carrier head including a housing enclosing the wafer, in which the housing includes a retainer ring recess and a retainer ring positioned in the retainer ring recess, the retainer ring surrounding the wafer, in which the retainer ring includes a main body portion and a bottom portion connected to the main body portion, and a bottom surface of the bottom portion includes at least one first engraved region and a first non-engraved region adjacent to the first engraved region; pressing the wafer against a polishing pad; and moving the carrier head or the polishing pad relative to the other.
Opening claim text (preview).
What is claimed is: 1. A method, comprising: securing a wafer in a carrier head, the carrier head comprising: a housing enclosing the wafer, wherein the housing includes a retainer ring recess; and a retainer ring positioned in the retainer ring recess, the retainer ring surrounding the wafer, wherein the retainer ring includes a main body portion and a bottom portion connected to the main body portion, a bottom surface of the bottom portion comprises at least one first engraved region and a first non-engraved region adjacent to the first engraved region, and the at least one first engraved region and the first non-engraved region are at the same level height; pressing the wafer against a polishing pad; moving the carrier head or the polishing pad relative to the other; providing a slurry to the polishing pad, the slurry including abrasive particles and a chemical solution; conditioning the polishing pad using a conditioning disk; and applying a first vacuum suction force over the polishing pad for collecting the abrasive particles through at least one first vacuum hole disposed on a second non-engraved region of a bottom surface of the conditioning disk. 2. The method of claim 1 , wherein the first engraved region on the bottom portion of the retainer ring is in friction engagement with the polishing pad during moving the carrier head to condition the polishing pad. 3. The method of claim 1 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head, and the first engraved region of the retainer ring of the carrier head is made of a non-diamond material. 4. The method of claim 1 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head, and the first non-engraved region of the retainer ring of the carrier head is made of a non-diamond material. 5. The method of claim 1 , wherein providing the slurry to the polishing pad is performed after securing the wafer in the carrier head. 6. The method of claim 1 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head, and the bottom portion of the carrier head comprise a plurality of grooves cut into the bottom portion to facilitate a flow of the slurry. 7. The method of claim 6 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head, and a surface of the main body portion of the carrier head exposed by the grooves of the bottom portion comprises at least one second engraved region and a third non-engraved region adjacent to the second engraved region. 8. The method of claim 1 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head, and the first engraved region of the bottom portion of the retainer ring of the carrier head comprises a plurality of protrusions and a plurality of grooves equally spaced apart from the protrusions. 9. The method of claim 8 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head, and the protrusions and the grooves of the first engraved region of the bottom portion of the retainer ring of the carrier head are one-piece formed. 10. The method of claim 1 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head having the retainer ring including the bottom portion comprising at least one second vacuum hole disposed on the bottom surface of the bottom portion of the retainer ring. 11. The method of claim 10 , further comprising applying a second vacuum suction force through the second vacuum hole along a direction away from the polishing pad. 12. The method of claim 11 , wherein applying the second vacuum suction force and moving the carrier head are performed substantially synchronously. 13. The method of claim 11 , wherein applying the second vacuum suction force is performed after moving the carrier head. 14. The method of claim 1 , wherein securing the wafer to the carrier head comprises securing the wafer to the carrier head, and the first engraved region of the bottom portion of the retainer ring of the carrier head has at least one rounded corner. 15. A method, comprising: providing a polishing pad; providing a slurry including abrasive particles and a chemical solution; providing a conditioning disk for conditioning a polishing pad of a chemical mechanical polishing system, wherein the conditioning disk has a bottom surface comprising at least one engraved region and a non-engraved region adjacent to the engraved region, and the engraved region and the non-engraved region are made of the same material; conditioning the polishing pad using the conditioning disk; and applying a vacuum suction force over the polishing pad for collecting the abrasive particles through at least one vacuum hole disposed on the non-engraved region of the bottom surface of the conditioning disk. 16. The method of claim 15 , wherein providing the conditioning disk comprising providing the conditioning disk comprising the engraved region formed using an ultra-precision machining method. 17. The method of claim 15 , wherein providing the conditioning disk comprises the engraved region being sector-shaped, donut-shaped, circular-shaped, or combinations thereof. 18. A chemical mechanical polishing system, comprising: a polishing pad; a carrier head including a retainer ring to retain a wafer proximate to the polishing pad during polishing, wherein a bottom surface of the retainer ring has a plurality of protrusions and a substantially flat region surrounding the protrusions, and the protrusions and the substantially flat region are monolithic, and the protrusions and the substantially flat region are at the same level height; and a conditioning disk over the polishing pad, wherein the conditioning disk comprises at least one vacuum hole disposed on a non-engraved region of a bottom surface of the conditioning disk. 19. The system of claim 18 , wherein the bottom surface of the conditioning disk comprises a plurality of protrusions made of a non-diamond material. 20. The system of claim 19 , wherein the conditioning disk comprises an engraved region having a distribution being a donut-shaped including a ring-shaped portion that encloses a circular shape portion.
of conductive or resistive materials · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
involving a dielectric removal step · CPC title
of fin field-effect transistors [FinFET] · CPC title
using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes · CPC title
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