Method and apparatus for examining a measuring tip of a scanning probe microscope

Patent metadata

Field	Value
Publication number	US-11680963-B2
Application number	US-202117551613-A
Country	US
Kind code	B2
Filing date	Dec 15, 2021
Priority date	Jul 12, 2017
Publication date	Jun 20, 2023
Grant date	Jun 20, 2023

Abstract

The present invention relates to a method for examining a measuring tip of a scanning probe microscope, wherein the method includes the following steps: (a) generating at least one test structure before a sample is analyzed, or after said sample has been analyzed, by the measuring tip; and (b) examining the measuring tip with the aid of the at least one generated test structure.

First claim

What is claimed is:

1. A method for examining a measuring tip of a scanning probe microscope, wherein the method includes the following steps:
a. generating at least one first test structure before a sample is analyzed, or after the sample has been analyzed, by the measuring tip, wherein generating the at least one first test structure is carried out on a sample stage, and wherein generating the at least one first test structure comprises a particle beam-induced deposition of the at least one first test structure and/or a particle beam-induced etching of the at least one first test structure; and
b. examining the measuring tip with the aid of the at least one first test structure deposited on and/or etched in the sample stage with the aid of the particle beam.

2. The method of claim 1 , wherein the sample comprises a photolithographic mask, a wafer, or a template for the nanoimprint lithography.

3. The method of claim 2 , wherein at least one second test structure is generated on an edge of the photolithographic mask, on which edge substantially no radiation at an actinic wavelength is incident.

4. The method of claim 3 , wherein the at least one second test structure is generated on a pattern element of the photolithographic mask.

5. The method of claim 1 , further including the following step: scanning the sample by a particle beam for finding a defect in the sample.

6. The method of claim 5 , further comprising the step of: generating at least one mark on the sample for the purpose of finding the defect by the measuring tip of the scanning probe microscope.

7. The method of claim 6 , wherein the at least one mark comprises at least one second test structure.

8. The method of claim 1 , wherein a contour of the at least one first test structure is matched to a contour of the sample.

9. The method of claim 8 , wherein the contour of the at least one first test structure is matched to the form of the measuring tip.

10. The method of claim 8 , wherein the contour of the at least one first test structure is embodied to detect a movement direction of the measuring tip that deviates from a sample normal.

11. The method of claim 1 , wherein the at least one first test structure comprises at least one structure element with an undercut.

12. The method of claim 1 , wherein the at least one first test structure is generated at a site of the sample stage at which the at least one first test structure substantially does not impair a function of the sample and/or the sample stage.

13. The method of claim 1 , wherein generating the at least one first test structure comprises: providing a focused particle beam and at least one precursor gas at the site at which the at least one first test structure is generated.

14. The method of claim 1 , wherein the at least one first test structure is generated on the sample stage when the sample stage is produced.

15. The method of claim 1 , wherein steps a. and b. are carried out in vacuo without breaking the vacuum.

16. The method of claim 1 , wherein examining the measuring tip further comprises: scanning the measuring tip over the at least one first deposited and/or etched test structure.

17. The method of claim 1 , wherein examining the measuring tip further comprises: imaging the at least one first test structure by way of a focused particle beam.

18. An apparatus for examining a measuring tip of a scanning probe microscope, comprising:
a. a generation unit that is embodied for particle beam-induced deposition and/or etching of at least one first test structure on or in a sample stage before a sample is analyzed, or after the sample has been analyzed, by the measuring tip; and
b. an examination unit that is embodied to examine the measuring tip with the aid of the at least one first test structure deposited on and/or etched in the sample stage with the aid of a particle beam.

19. The apparatus of claim 18 , further comprising a displacement unit that is embodied to bridge a distance between a point of incidence of a particle beam of the generation unit on the sample and/or the sample stage and an interaction location between the sample and/or the sample stage and the measuring tip.

20. The apparatus of claim 18 , embodied to carry out the method steps comprising:
generating the at least one first test structure before the sample is analyzed, or after the sample has been analyzed, by the measuring tip, wherein generating the at least one first test structure is carried out on the sample stage, and wherein generating the at least one first test structure comprises a particle beam-induced deposition of the at least one first test structure and/or a particle beam-induced etching of the at least one first test structure; and
examining the measuring tip with the aid of the at least one first test structure deposited on and/or etched in the sample stage with the aid of the particle beam.

21. A non-transitory computer readable medium storing A computer program comprising instructions that, when executed by a computer system of the apparatus, prompt a control device of the apparatus to carry out the method steps comprising:
generating at least one first test structure before a sample is analyzed, or after the sample has been analyzed, by the measuring tip, wherein generating the at least one first test structure is carried out on a sample stage, and wherein generating the at least one first test structure comprises a particle beam-induced deposition of the at least one first test structure and/or a particle beam-induced etching of the at least one first test structure; and
examining the measuring tip with the aid of the at least one first test structure deposited on and/or etched in the sample stage with the aid of the particle beam.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Kornilov Kinga
• Baur Christof
• Bauer Markus

Classifications

• G01Q30/02

  Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope · CPC title

• G01Q20/02

  by optical means · CPC title

• G01Q70/08

  Probe characteristics · CPC title

• G01Q40/02 Primary

  Calibration standards and methods of fabrication thereof · CPC title

• G01Q70/06 Primary

  Probe tip arrays · CPC title