Method and apparatus for examining a measuring tip of a scanning probe microscope

Patent metadata

Field	Value
Publication number	US-11237187-B2
Application number	US-202016736360-A
Country	US
Kind code	B2
Filing date	Jan 7, 2020
Priority date	Jul 12, 2017
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

The present invention relates to a method for examining a measuring tip of a scanning probe microscope, wherein the method includes the following steps: (a) generating at least one test structure before a sample is analyzed, or after said sample has been analyzed, by the measuring tip; and (b) examining the measuring tip with the aid of the at least one generated test structure.

First claim

What is claimed is:

1. A method for examining a measuring tip of a scanning probe microscope, wherein the method includes the following steps:
a. analyzing a first region of a sample by using the measuring tip;
b. generating at least one test structure before the first region of the sample is analyzed, or after said first region of the sample has been analyzed, by the measuring tip, wherein generating the at least one test structure is carried out on a second region of the sample, and wherein generating the at least one test structure comprises a particle beam-induced deposition of the at least one test structure and/or a particle beam-induced etching of the at least one test structure; and
c. examining the measuring tip with the aid of the at least one test structure deposited and/or etched on the sample with the aid of the particle beam.

2. The method of claim 1 , wherein a contour of the at least one test structure is matched to a contour of the sample.

3. The method of claim 2 , wherein the contour of the at least one test structure is matched to the form of the measuring tip.

4. The method of claim 2 , wherein the contour of the at least one test structure is embodied to detect a movement direction of the measuring tip that deviates from a sample normal.

5. The method of claim 1 , wherein the test structure comprises at least one structure element with an undercut.

6. The method of claim 1 , wherein the at least one test structure is generated at a site of the sample at which the at least one test structure substantially does not impair a function of the sample.

7. The method of claim 1 , wherein generating the at least one test structure comprises: providing a focused particle beam and at least one precursor gas at the site at which the at least one test structure is generated.

8. The method of claim 1 , wherein the at least one test structure is generated on the sample when the sample is produced.

9. The method of claim 1 , wherein steps a. and b. are carried out in vacuo without breaking the vacuum.

10. The method of claim 1 , wherein examining the measuring tip further comprises: scanning the measuring tip over the at least one deposited and/or etched test structure.

11. The method of claim 1 , wherein examining the measuring tip further comprises: imaging the at least one deposited and/or etched test structure by way of a focused particle beam.

12. The method of claim 1 , further including the following step: scanning the sample by a particle beam for finding a defect in the sample.

13. The method of claim 12 , further including the step of: generating at least one mark on the sample for the purposes of finding the defect by the measuring tip of the scanning probe microscope.

14. The method of claim 13 , wherein the at least one mark comprises the at least one test structure.

15. The method of claim 1 , wherein the sample comprises a photolithographic mask or a wafer.

16. The method of claim 15 , wherein the at least one test structure is generated on an edge of the photolithographic mask, on which edge substantially no radiation at an actinic wavelength is incident.

17. The method of claim 15 , wherein the at least one test structure is generated on a pattern element of the photolithographic mask.

18. An apparatus for examining a measuring tip of a scanning probe microscope, comprising:
a. a generation unit that is embodied for particle beam-induced deposition and/or etching of a test structure on or in a second region of a sample before a first region of the sample is analyzed, or after the first region of said sample has been analyzed, by the measuring tip; and
b. an examination unit that is embodied to examine the measuring tip with the aid of the at least one test structure deposited and/or etched on the sample with the aid of a particle beam.

19. The apparatus of claim 18 , further comprising a displacement unit that is embodied to bridge a distance between a point of incidence of a particle beam of the generation unit on the sample and/or a sample stage and an interaction location between the sample and/or the sample stage and the measuring tip.

20. The apparatus of claim 18 , embodied to carry out the method steps comprising:
generating at least one test structure before a sample is analyzed, or after said sample has been analyzed, by the measuring tip, wherein generating the at least one test structure is carried out on the sample, and wherein generating the at least one test structure comprises a particle beam-induced deposition of the test structure and/or a particle beam-induced etching of the at least one test structure; and
examining the measuring tip with the aid of the at least one test structure deposited and/or etched on the sample with the aid of the particle beam.

21. A computer program comprising instructions that, when executed by a computer system of an apparatus, prompt a control device of the apparatus to carry out the method steps comprising:
analyzing a first region of a sample by using a measuring tip of a scanning probe microscope;
generating at least one test structure before the first region of the sample is analyzed, or after said first region of the sample has been analyzed, by the measuring tip, wherein generating the at least one test structure is carried out on a second region of the sample, and wherein generating the at least one test structure comprises a particle beam-induced deposition of the at least one test structure and/or a particle beam-induced etching of the at least one test structure; and
examining the measuring tip with the aid of the at least one test structure deposited and/or etched on the sample with the aid of the particle beam.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Kornilov Kinga
• Baur Christof
• Bauer Markus

Classifications

• G01Q30/02

  Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope · CPC title

• G01Q70/08

  Probe characteristics · CPC title

• G01Q40/02 Primary

  Calibration standards and methods of fabrication thereof · CPC title

• G01Q20/02

  by optical means · CPC title

• G01Q40/00

  Calibration, e.g. of probes · CPC title