Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11512392-B2
Application number	US-201916555618-A
Country	US
Kind code	B2
Filing date	Aug 29, 2019
Priority date	Jan 21, 2015
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a substrate retainer configured to support substrates;
a heat-insulating unit disposed under the substrate retainer;
a transfer chamber where the substrates are loaded into the substrate retainer;
a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism comprising: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region;
and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region;
a first exhaust unit disposed beside the substrate retainer;
a second exhaust unit disposed below the heat-insulating unit to exhaust the gas from a bottom portion of the heat-insulating unit;
a process chamber in which the substrates supported by the substrate retainer are accommodated and processed;
a shutter configured to close a lower end of the process chamber;
a retracting portion configured to accommodate the shutter when the substrate retainer is loaded into the process chamber, wherein the retracting portion is disposed at an upper end of one sidewall of the transfer chamber to protrude outward from the transfer chamber; and
a third exhaust unit configured to exhaust an inside of the retracting portion,
wherein the first gas supply mechanism and the second gas supply mechanism are provided separately from each other and disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

2. The substrate processing apparatus of claim 1 , wherein the first exhaust unit is disposed on a second sidewall of the transfer chamber opposite to the first sidewall with the substrate retainer disposed therebetween, and is configured to exhaust the gas supplied by the first gas supply mechanism.

3. The substrate processing apparatus of claim 2 , wherein the second exhaust unit is disposed at a bottom of the transfer chamber, and is configured to exhaust the gas supplied by the second gas supply mechanism.

4. The substrate processing apparatus of claim 1 ,
wherein the first gas supply mechanism comprises:
a first fan installed below a bottom of the transfer chamber and configured to ventilate the gas;
a first filter attached to a first gas supply port such that the first gas supply mechanism forms planar flow of the gas; and
a first duct configured to guide the gas upward from the first fan to the first filter,
wherein the second gas supply mechanism comprises:
a second fan installed below the bottom of the transfer chamber and configured to ventilate the gas;
a second filter attached to a second gas supply port such that the second gas supply mechanism forms planar flow of the gas; and
a second duct configured to guide the gas upward from the second fan to the second filter, and
wherein the first fan and the second fan are configured to blow the gas into the first duct and the second duct, respectively, and the first fan has an output greater than an output of the second fan.

5. The substrate processing apparatus of claim 3 ,
wherein the second exhaust unit is disposed closer to the second sidewall provided with the first exhaust unit than the first sidewall provided with the first gas supply mechanism in the transfer chamber,
wherein a horizontal cross-sectional area of the second exhaust unit is smaller than that of the lower region of the transfer chamber at a height of a lowermost portion of the substrate retainer, and
wherein at least one of a lower portion of the first sidewall provided between the second gas supply mechanism and the second exhaust unit and a lower portion of the second sidewall provided between the first exhaust unit and the second exhaust unit comprises a slope inclined inward.

6. The substrate processing apparatus of claim 5 , wherein an upper end of the slope is lower than a lower end of the heat-insulating unit,
wherein the slope at the lower portion of the first sidewall is less inclined than the slope at the lower portion of the second sidewall, and
wherein the second exhaust unit comprises a punched panel.

7. The substrate processing apparatus of claim 1 , further comprising:
a first circulation path configured to supply the gas exhausted from the upper region back into the upper region via the first gas supply mechanism; and
a second circulation path configured to supply the gas exhausted from the lower region back into the lower region via the second gas supply mechanism,
wherein the first circulation path and the second circulation path partially share a confluent path having an upstream side where the first circulation path and the second circulation path converge and a downstream side where the confluent path is divided into the first circulation path and the second circulation path,
wherein a cooling unit configured to cool the gas is provided in the confluent path,
wherein the first gas supply mechanism and the second gas supply mechanism comprise a first ventilation unit and a second ventilation unit, respectively, which are configured to ventilate the gas, and the first gas supply mechanism and the second gas supply mechanism are provided at the downstream side of the confluent path to be adjacent to each other, and
wherein the first ventilation unit has an output greater than an output of the second ventilation unit.

8. The substrate processing apparatus of claim 1 , further comprising a boundary plate fixed at a boundary between the upper region and the lower region in the transfer chamber to divide the transfer chamber into the upper region and the lower region,
wherein the boundary plate comprises:
a circular opening having a diameter greater than a diameter of a seal cap; and
a first cutaway portion wider than an arm to pass the arm therethrough.

9. The substrate processing apparatus of claim 1 ,
wherein the retracting portion having straight portions and a curved portion at an intersection of the straight portions,
wherein the third exhaust unit is disposed along the straight portions and the curved portion and configured to exhaust a corner of the transfer chamber.

10. A method of manufacturing a semiconductor device comprising:
(a) providing the substrate processing apparatus of claim 1 ;
(b) loading the substrate retainer charged with the substrates into the process chamber from the transfer chamber;
(c) processing the substrates in the process chamber under a desired pressure; and
(d) unloading the substrate retainer from the process chamber and cooling the substrates by the gas supply mechanism.

11. The substrate processing apparatus of claim 1 , wherein the second exhaust unit exhausts the gas from the bottom portion of the heat-insulating unit without the gas passing through a duct.

12. The substrate processing apparatus of claim 1 , further comprising:
a rotation mechanism provided under the heat-insulating unit and configured to rotate the substrate retainer,
wherein the second exhaust unit exhausts the gas in a vertically downward direction from the rotation mechanism.

13. A substrate processing apparatus comprising:
a substrate retainer configured to support substrates;
a heat-insulating unit disposed under the substrate retainer;
a transfer chamber where the substrates are loaded into the substrate retainer;
a gas supply mechanism configured to supply a gas into the transfer

Assignees

• Kokusai Electric Corp

Inventors

• Nakada Takayuki
• Nogami Takashi
• Taniyama Tomoshi
• Kamimura Daigi

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/33

  into and out of processing chamber · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title

• C23C16/45502 Primary

  Flow conditions in reaction chamber · CPC title