Methods and apparatus for flow isolation and focusing during electroplating

Patent metadata

Field	Value
Publication number	US-11001934-B2
Application number	US-201816101291-A
Country	US
Kind code	B2
Filing date	Aug 10, 2018
Priority date	Aug 21, 2017
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

First claim

What is claimed is:

1. An electroplating apparatus comprising:
(a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate, the substrate being substantially planar;
(b) a substrate holder configured to support the substrate such that a plating face of the substrate is immersed in the electrolyte and separated from the anode during plating;
(c) an ionically resistive element adapted to provide ionic transport through the ionically resistive element during electroplating, wherein the ionically resistive element is a plate comprising a plurality of through-holes;
(d) a cross flow manifold positioned above the ionically resistive element and below the plating face of the substrate, when the substrate is present in the substrate holder;
(e) an anode chamber membrane frame positioned below the ionically resistive element, the anode chamber membrane frame configured to mate with an anode chamber membrane; and
(f) an ionically resistive element manifold positioned below the ionically resistive element and above the anode chamber membrane, when present, wherein the ionically resistive element manifold comprises a plurality of baffle regions that are at least partially separated from one another by vertically oriented baffles, wherein each baffle extends from a first region proximate the ionically resistive element to a second region proximate the anode chamber membrane, and wherein the baffles extend linearly across the ionically resistive element manifold in a direction perpendicular to a direction between a side inlet and a side outlet, wherein the side inlet and side outlet are adapted to generate cross-flowing electrolyte in the cross flow manifold during electroplating.

2. The electroplating apparatus of claim 1 , further comprising the anode chamber membrane in contact with the anode chamber membrane frame, wherein the anode chamber membrane separates the anode from the substrate during electroplating.

3. The electroplating apparatus of claim 2 , wherein an upper region of each baffle is in physical contact with the ionically resistive element or a frame positioned proximate the ionically resistive element.

4. The electroplating apparatus of claim 1 , wherein during electroplating, the baffles operate to reduce an amount of electrolyte that travels from the cross flow manifold, through the ionically resistive element, and into the ionically resistive element manifold.

5. The electroplating apparatus of claim 1 , wherein the anode chamber membrane frame comprises the baffles.

6. The electroplating apparatus of claim 5 , further comprising a back side insert positioned between the ionically resistive element and the anode chamber membrane frame, wherein the back side insert comprises a plurality of protrusions oriented parallel to the baffles and configured to mate with the baffles.

7. The electroplating apparatus of claim 1 , wherein the baffles do not extend all the way to the anode chamber membrane frame.

8. The electroplating apparatus of claim 1 , wherein the ionically resistive element comprises the baffles.

9. The electroplating apparatus of claim 1 , further comprising a back side insert positioned between the ionically resistive element and the anode chamber membrane frame, wherein the back side insert comprises the baffles.

10. The electroplating apparatus of claim 1 , wherein the baffles are removable pieces that are not integral with the ionically resistive element, the anode chamber membrane frame, nor a back side insert positioned between the ionically resistive element and the anode chamber membrane frame, and wherein the baffles fit into recesses in at least one of the ionically resistive element, the anode chamber membrane frame, and the back side insert.

11. An electroplating apparatus comprising:
(a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate, the substrate being substantially planar;
(b) a substrate holder configured to support the substrate such that a plating face of the substrate is immersed in the electrolyte and separated from the anode during plating;
(c) an ionically resistive element adapted to provide ionic transport through the ionically resistive element during electroplating, wherein the ionically resistive element is a plate comprising a plurality of through-holes;
(d) a cross flow manifold positioned above the ionically resistive element and below the plating face of the substrate, when the substrate is present in the substrate holder;
(e) a membrane in physical contact with the ionically resistive element, wherein the membrane is adapted to provide ionic transport through the membrane during electroplating, and wherein the membrane is adapted to reduce a flow of electrolyte through the ionically resistive element during electroplating, and wherein the membrane comprises one or more azimuthally non-uniform cutout regions such that the membrane only covers some of the plurality of through-holes in the ionically resistive element.

12. The electroplating apparatus of claim 11 , wherein the membrane is planar and is positioned within a plane parallel to the ionically resistive element.

13. The electroplating apparatus of claim 11 , wherein the membrane comprises a first cutout region positioned near a center of the ionically resistive element.

14. The electroplating apparatus of claim 13 , wherein the membrane comprises a second cutout region positioned near a side inlet to the cross flow manifold.

15. The electroplating apparatus of claim 11 , wherein the membrane is positioned below the ionically resistive element.

16. The electroplating apparatus of claim 11 , wherein the membrane is positioned above the ionically resistive element.

17. The electroplating apparatus of claim 11 , further comprising a membrane frame configured to position the membrane in physical contact with the ionically resistive element.

18. The electroplating apparatus of claim 17 , wherein the membrane is positioned above the ionically resistive element, wherein the membrane frame is positioned above the membrane, and wherein the membrane frame comprises a first set of ribs that are linear and parallel to one another, and extend in a direction perpendicular to a direction of cross flowing electrolyte within the cross flow manifold.

19. An electroplating apparatus comprising:
(a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate, the substrate being substantially planar;
(b) a substrate holder configured to support the substrate such that a plating face of the substrate is immersed in the electrolyte and separated from the anode during plating;
(c) an ionically resistive element adapted to provide ionic transport through the ionically resistive element during electroplating, wherein the ionically resistive element is a plate comprising a plurality of through-holes;
(d) a cross flow manifold positioned above the ionically resistive element and below the plating face of the substrate, when the substrate is present in the substrate holder;
(e) a membrane in physical contact with the ionically resistive element, wherein the membrane is adapted to provide ionic transport through the membrane during electroplating, and wherein the membrane is adapted to reduce a flow of electrolyte through the ionically resistive element during electroplating and
(f) a membrane frame configured to position the membrane in physical contact with the ionically resistive eleme

Assignees

• Lam Res Corp

Inventors

• Banik Ii Stephen J
• Buckalew Bryan L
• Berke Aaron
• Fortner James Isaac
• Oberst Justin
• Mayer Steven T
• Rash Robert

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• C25D17/008

  Current shielding devices · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C25D17/002

  Cell separation, e.g. membranes, diaphragms · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title