Cross flow manifold for electroplating apparatus

US9624592B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9624592-B2
Application numberUS-201313893242-A
CountryUS
Kind codeB2
Filing dateMay 13, 2013
Priority dateJul 2, 2010
Publication dateApr 18, 2017
Grant dateApr 18, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

First claim

Opening claim text (preview).

What is claimed is: 1. An electroplating apparatus comprising: (a) an electroplating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate, the substrate being substantially planar; (b) a substrate holder configured to hold the substrate such that a plating face of the substrate is separated from the anode during electroplating; (c) an ionically resistive element including a substrate-facing surface that is separated from the plating face of the substrate by a gap of about 10 mm or less, wherein the ionically resistive element is at least coextensive with the plating face of the substrate during electroplating, the ionically resistive element adapted to provide ionic transport through the element during electroplating; (d) a cross flow injection manifold at least partially defined by a cavity in the ionically resistive element, wherein the cross flow injection manifold is arc-shaped and positioned proximate a periphery of the substrate; (e) a cross flow confinement ring positioned proximate the periphery of the substrate and positioned at least partially between the ionically resistive element and the substrate holder, wherein the cross flow confinement ring at least partially defines a side of the gap; (f) an inlet to the gap for introducing electrolyte to the gap, wherein the inlet receives electrolyte from the cross flow injection manifold; and (g) an outlet to the gap for receiving electrolyte flowing in the gap, wherein the inlet and outlet are positioned proximate azimuthally opposing perimeter locations on the plating face of the substrate during electroplating, and wherein the inlet and outlet are adapted to generate cross-flowing electrolyte in the gap to create or maintain a shearing force on the plating face of the substrate during electroplating. 2. The electroplating apparatus of claim 1 , wherein the ionically resistive element has a porosity of between about 1-10%. 3. The electroplating apparatus of claim 2 , wherein the ionically resistive element comprises at least 1000 paths through which electrolyte may flow during electroplating. 4. The electroplating apparatus of claim 3 , wherein at least some of the paths are configured to deliver electrolyte towards the substrate at a velocity of at least about 10 cm/s at an outlet of the at least some paths. 5. The electroplating apparatus of claim 1 , wherein the ionically resistive element is configured to shape an electric field and control electrolyte flow characteristics proximate the substrate during electroplating. 6. The electroplating apparatus of claim 1 , further comprising a lower manifold region positioned below a lower face of the ionically resistive element, wherein the lower face faces away from the substrate holder. 7. The electroplating apparatus of claim 6 , further comprising a central electrolyte chamber and one or more feed channels configured to deliver electrolyte from the central electrolyte chamber to both the inlet and to the lower manifold region. 8. The electroplating apparatus of claim 7 , further comprising a pump for delivering electrolyte to or from the central electrolyte chamber. 9. The electroplating apparatus of claim 8 , wherein the pump and the inlet are adapted to deliver electrolyte in the gap at a cross flow velocity of at least about 3 cm/s across a center point on the plating face of the substrate. 10. The electroplating apparatus of claim 1 , further comprising flow directing elements adapted to cause electrolyte to flow in a substantially linear flow path from the inlet to the outlet. 11. The electroplating apparatus of claim 10 , wherein the flow directing elements are partitions configured to divide flowing electrolyte into adjacent streams in the gap. 12. The electroplating apparatus of claim 1 , further comprising a gasket positioned between the ionically resistive element and the cross flow confinement ring. 13. The electroplating apparatus of claim 1 , further comprising a membrane frame for supporting a membrane, wherein the membrane separates the electroplating chamber into a cathode chamber and an anode chamber. 14. The electroplating apparatus of claim 1 , further comprising a weir wall positioned radially outside the gap and configured to receive electrolyte flowing through the outlet. 15. The electroplating apparatus of claim 1 , wherein the substrate holder can be rotated during electroplating. 16. The electroplating apparatus of claim 1 , wherein the ionically resistive element is positioned substantially parallel to the substrate during electroplating. 17. The electroplating apparatus of claim 1 , wherein the inlet spans an arc between about 90-180° proximate the perimeter of the plating face of the substrate. 18. The electroplating apparatus of claim 1 , wherein the inlet is separated into a plurality of azimuthally distinct and fluidically separated segments. 19. The electroplating apparatus of claim 18 , further comprising a plurality of electrolyte feed inlets configured to deliver electrolyte to the azimuthally distinct segments of the inlet. 20. The electroplating apparatus of claim 19 , further comprising one or more flow control elements configured to independently control a plurality of volumetric flow rates of electrolyte in the plurality of electrolyte feed inlets during electroplating. 21. The electroplating apparatus of claim 19 , wherein the electroplating apparatus is configured to independently control a plurality of volumetric flow rates of electrolyte in the plurality of electrolyte feed inlets during electroplating. 22. The electroplating apparatus of claim 1 , wherein the apparatus is configured such that, in operation, electrolyte flows under a portion of the cross flow confinement ring. 23. The electroplating apparatus of claim 1 , wherein the inlet to the gap and the outlet to the gap are defined in the cross flow confinement ring. 24. The electroplating apparatus of claim 20 , wherein the flow control elements comprise fluidic adjustment rods.

Assignees

Inventors

Classifications

  • Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

  • by plating, e.g. electroless plating or electroplating · CPC title

  • comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title

  • by selectively depositing, e.g. by using selective CVD or plating · CPC title

  • the interconnections being through-semiconductor vias · CPC title

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What does patent US9624592B2 cover?
The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channele…
Who is the assignee on this patent?
Novellus Systems Inc
What technology area does this patent fall under?
Primary CPC classification C25D5/08. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).