Thermally decomposable polymer compositions for forming microelectronic assemblies
US-9505948-B2 · Nov 29, 2016 · US
US10610979B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10610979-B2 |
| Application number | US-201815988257-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 24, 2018 |
| Priority date | May 25, 2017 |
| Publication date | Apr 7, 2020 |
| Grant date | Apr 7, 2020 |
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Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.
Opening claim text (preview).
What is claimed is: 1. A flux containing: 5% by mass or more and 30% by mass or less of an organic acid, 13% by mass or more and 40% by mass or less of an amine, 1% by mass or more and 15% by mass or less of a surfactant, 10% by mass or more and 30% by mass or less of a base agent, and 10% by mass or more and 40% by mass or less of a solvent, wherein the amine has 700 or less of a molecular weight, the surfactant has more than 700 of the molecular weight, and the surfactant is any one selected from a group consisting of polyoxyalkylene alkylamine surfactant, polyoxyalkylene alkylenediamine surfactant, and polyoxyalkylene alkylenetriamine surfactant; 11.0 degrees or more and 17.0 degrees or less of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature; and more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux has been applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth. 2. The flux according to claim 1 , wherein the amine is at least any one selected from a group consisting of imidazoles, aliphatic amine, aromatic amine, aminoalcohol, polyoxyalkylene alkylamine, terminal amine polyoxyalkylene, amine halogenated hydroacid salt, and polyoxyalkylene amine.
with the principal constituent melting at less than 400°C · CPC title
with organic compounds as principal constituents · CPC title
Selection of compositions of fluxes (B23K35/365, B23K35/368 take precedence) · CPC title
N-compounds · CPC title
Halogen compounds · CPC title
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