Method for manufacturing a semiconductor device
US-12557572-B2 · Feb 17, 2026 · US
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Wang Jen Hung patents
Wang Jen Hung is listed as an inventor on 50 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Jen Hung |
| Total patents | 50 |
| First publication | Jan 4, 2018 |
| Latest publication | Feb 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Self-aligned scheme for semiconductor device and method of forming the same
US-2025364328-A1 · Nov 27, 2025 · US
Self-aligned scheme for semiconductor device and method of forming the same
US-12476146-B2 · Nov 18, 2025 · US
Interconnect structures and methods of forming the same
US-2025343073-A1 · Nov 6, 2025 · US
Interconnect Structure and Method of Forming the Same
US-2025336721-A1 · Oct 30, 2025 · US
Interconnect structure and method of forming the same
US-12438041-B2 · Oct 7, 2025 · US
Interconnect structures and methods of forming the same
US-12347726-B2 · Jul 1, 2025 · US
Semiconductor device and method
US-12315726-B2 · May 27, 2025 · US
Semiconductor device and method
US-12237224-B2 · Feb 25, 2025 · US
Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect
US-12159830-B2 · Dec 3, 2024 · US
Recent patents
Latest publications not already listed above.
Semiconductor device and method
US-2024387268-A1 · Nov 21, 2024 · US
Interconnect Structures and Methods of Forming the Same
US-2024387253-A1 · Nov 21, 2024 · US
Nitrogen Plasma Treatment For Improving Interface Between Etch Stop Layer And Copper Interconnect
US-2024379541-A1 · Nov 14, 2024 · US
Method for manufacturing a semiconductor device
US-2024282571-A1 · Aug 22, 2024 · US
Semiconductor device and method
US-2024249942-A1 · Jul 25, 2024 · US
Semiconductor device and method
US-11948798-B2 · Apr 2, 2024 · US
Self-aligned scheme for semiconductor device and method of forming the same
US-11901228-B2 · Feb 13, 2024 · US
Self-aligned scheme for semiconductor device and method of forming the same
US-2023377966-A1 · Nov 23, 2023 · US
Interconnect Structure and Method of Forming the Same
US-2023335436-A1 · Oct 19, 2023 · US
Metal-based etch-stop layer
US-11769693-B2 · Sep 26, 2023 · US
Interconnect structure with dielectric cap layer and etch stop layer stack
US-2023253247-A1 · Aug 10, 2023 · US
Interconnect structure with dielectric cap layer and etch stop layer stack
US-11658064-B2 · May 23, 2023 · US
Etch stop layer for semiconductor devices
US-11651993-B2 · May 16, 2023 · US
Interconnect Structures and Methods of Forming the Same
US-2023135172-A1 · May 4, 2023 · US
Semiconductor Device and Method
US-2023121210-A1 · Apr 20, 2023 · US
Nitrogen Plasma Treatment For Improving Interface Between Etch Stop Layer And Copper Interconnect
US-2023121958-A1 · Apr 20, 2023 · US
Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect
US-11532548-B2 · Dec 20, 2022 · US
Self-Aligned Scheme for Semiconductor Device and Method of Forming the Same
US-2022319922-A1 · Oct 6, 2022 · US
Etch stop layer for semiconductor devices
US-11322396-B2 · May 3, 2022 · US
Interconnect structure with dielectric cap layer and etch stop layer stack
US-2022102203-A1 · Mar 31, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 53 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10W20/075 | 35 |
| H10W20/056 | 29 |
| H10W20/47 | 26 |
| H10W20/42 | 26 |
| H10W20/077 | 26 |