Semiconductor structure including multiple barrier layers and method for forming the same
US-12557619-B2 · Feb 17, 2026 · US
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Nian Jun-Nan patents
Nian Jun-Nan is listed as an inventor on 38 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Nian Jun-Nan |
| Total patents | 38 |
| First publication | Sep 17, 2015 |
| Latest publication | Feb 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Apparatus and method for monitoring chemical mechanical polishing
US-2025360594-A1 · Nov 27, 2025 · US
Conductive structures and methods of fabrication thereof
US-2025323144-A1 · Oct 16, 2025 · US
Method of manufacturing semiconductor devices and semiconductor devices
US-2025300005-A1 · Sep 25, 2025 · US
Conductive structures and methods of fabrication thereof
US-12362273-B2 · Jul 15, 2025 · US
Method of manufacturing semiconductor devices and semiconductor devices
US-12341055-B2 · Jun 24, 2025 · US
Semiconductor electrochemical plating apparatus and method
US-2024392463-A1 · Nov 28, 2024 · US
Method and apparatus for copper plating in semiconductor devices
US-2024387379-A1 · Nov 21, 2024 · US
Semiconductor device structure and methods of forming the same
US-2024371919-A1 · Nov 7, 2024 · US
Capacitor structure including a buffer layer and methods of formation
US-2024355870-A1 · Oct 24, 2024 · US
Recent patents
Latest publications not already listed above.
Semiconductor device structure and methods of forming the same
US-12080751-B2 · Sep 3, 2024 · US
Apparatus and method for monitoring chemical mechanical polishing
US-2024051085-A1 · Feb 15, 2024 · US
Semiconductor structure and method for forming the same
US-2023402320-A1 · Dec 14, 2023 · US
Semiconductor device structure and methods of forming the same
US-2023369386-A1 · Nov 16, 2023 · US
Conductive structures and methods of fabrication thereof
US-2023215802-A1 · Jul 6, 2023 · US
Method of manufacturing semiconductor devices and semiconductor devices
US-2023207381-A1 · Jun 29, 2023 · US
Method for controlling electrochemical deposition to avoid defects in interconnect structures
US-11603602-B2 · Mar 14, 2023 · US
Electrochemical plating system and method of using
US-11598016-B2 · Mar 7, 2023 · US
Electrochemical plating system and method of using
US-2022042197-A1 · Feb 10, 2022 · US
Electrochemical plating system and method of using
US-11230784-B2 · Jan 25, 2022 · US
N-work function metal with crystal structure
US-11133395-B2 · Sep 28, 2021 · US
Method for controlling electrochemical deposition to avoid defects in inerconnect structures
US-2021238765-A1 · Aug 5, 2021 · US
Method for controlling electrochemical deposition to avoid defects in interconnect structures
US-11015260-B2 · May 25, 2021 · US
Method of electroplating metal into recessed feature and electroplating layer in recessed feature
US-10879629-B2 · Dec 29, 2020 · US
Formation of copper layer structure with self anneal strain improvement
US-10840184-B2 · Nov 17, 2020 · US
Method of electroplating metal into recessed feature and electroplating layer in recessed feature
US-10749278-B2 · Aug 18, 2020 · US
Method for controlling electrochemical deposition to avoid defects in inerconnect structures
US-2020176310-A1 · Jun 4, 2020 · US
Electrochemical plating system and method of using
US-2020173051-A1 · Jun 4, 2020 · US
N-work Function Metal with Crystal Structure
US-2019252512-A1 · Aug 15, 2019 · US
N-work function metal with crystal structure
US-10269918-B2 · Apr 23, 2019 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 37 |
| Taiwan Semiconductor Mfg | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| C25D7/123 | 17 |
| C25D3/38 | 17 |
| H10W20/056 | 13 |
| H10P14/47 | 13 |
| C25D7/12 | 12 |