Method of electroplating metal into recessed feature and electroplating layer in recessed feature

Patent metadata

Field	Value
Publication number	US-10879629-B2
Application number	US-201816205286-A
Country	US
Kind code	B2
Filing date	Nov 30, 2018
Priority date	Jan 15, 2016
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

First claim

What is claimed is:

1. A method of electroplating a metal into a recessed feature, the method comprising:
contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive, and a leveler additive, wherein:
the recessed feature has:
a first elongated region extending between a first sidewall, a second sidewall, and a first end wall extending between the first sidewall and the second sidewall,
a second elongated region extending between a third sidewall, a fourth sidewall, and a second end wall extending between the third sidewall and the fourth sidewall, and
a cross region laterally between the first elongated region and the second elongated region,

a width of the cross region is less than or equal to 50 nm,
the first sidewall is not parallel to the third sidewall and the fourth sidewall,
the second sidewall is not parallel to the third sidewall and the fourth sidewall,
the first end wall is different than the second end wall,
a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2), and
a molar concentration of the suppressor additive is in a range of 1.5 mol/L to 3 mol/L; and

electroplating the metal into the recessed feature using the electroplating solution to form an electroplating layer in the recessed feature, wherein:
the electroplating layer comprises the metal and carbon,
an atomic ratio of the carbon to the metal is less than or equal to 0.1, and
the electroplating layer is free of void space.

2. The method of claim 1 , wherein a molecular weight of the accelerator additive is less than a molecular weight of the suppressor additive.

3. The method of claim 1 , wherein a molecular weight of the accelerator additive is less than a molecular weight of the leveler additive.

4. The method of claim 1 , wherein the cross region has a depth greater than or equal to 50 nm.

5. The method of claim 1 , wherein the cross region has a depth greater than a depth of the first elongated region.

6. The method of claim 1 , wherein contacting the surface of the recessed feature with the electroplating solution comprises contacting the surface with the electroplating solution prior to electroplating the metal.

7. The method of claim 1 , comprising:
applying a seed layer to the surface prior to contacting the surface with the electroplating solution.

8. The method of claim 1 , wherein the accelerator additive is absorbed by the surface.

9. The method of claim 1 , wherein the metal ions comprise copper and at least one of tin, zinc, indium, or antimony.

10. A method of electroplating copper into a recessed feature, the method comprising:
contacting a surface of the recessed feature with an electroplating solution comprising copper ions, an accelerator additive, a suppressor additive, and a leveler additive, wherein:
the recessed feature has:
a first elongated region extending between a first sidewall, a second sidewall, and a first end wall extending between the first sidewall and the second sidewall,
a second elongated region extending between a third sidewall, a fourth sidewall, and a second end wall extending between the third sidewall and the fourth sidewall, and
a cross region laterally between the first elongated region and the second elongated region,

a width of the cross region is less than or equal to 50 nm,
the first sidewall is not parallel to the third sidewall and the fourth sidewall,
the second sidewall is not parallel to the third sidewall and the fourth sidewall,
the first end wall is different than the second end wall, and
a molecular weight of the accelerator additive is less than a molecular weight of the suppressor additive; and

electroplating the copper into the recessed feature using the electroplating solution to form an electroplating layer in the recessed feature, wherein:
the electroplating layer comprises the copper and carbon,
an atomic ratio of the carbon to the copper is less than or equal to 0.1, and
the electroplating layer is free of void space.

11. The method of claim 10 , wherein the molecular weight of the accelerator additive is less than a molecular weight of the leveler additive.

12. The method of claim 11 , wherein a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2).

13. The method of claim 10 , wherein the cross region has a depth greater than a depth of the first elongated region.

14. The method of claim 10 , wherein contacting the surface of the recessed feature with the electroplating solution comprises contacting the surface with the electroplating solution prior to electroplating the copper.

15. The method of claim 10 , comprising:
applying a seed layer to the surface prior to contacting the surface with the electroplating solution.

16. A method of electroplating a metal into a recessed feature, the method comprising:
contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, and a suppressor additive, wherein:
the recessed feature has:
a first elongated region extending between a first sidewall, a second sidewall, and a first end wall extending between the first sidewall and the second sidewall,
a second elongated region extending between a third sidewall, a fourth sidewall, and a second end wall extending between the third sidewall and the fourth sidewall, and
a cross region laterally between the first elongated region and the second elongated region,

a width of the cross region is less than or equal to 50 nm,
the first sidewall is not parallel to the third sidewall and the fourth sidewall,
the second sidewall is not parallel to the third sidewall and the fourth sidewall,
the first end wall is different than the second end wall,
a molar concentration ratio of the accelerator additive:the suppressor additive is (8-15):(1.5-3), and
the metal ions have a concentration of 10 g/L to 180 g/L in the electroplating solution; and

electroplating the metal into the recessed feature using the electroplating solution to form an electroplating layer in the recessed feature, wherein:
the electroplating layer comprises the metal and carbon,
an atomic ratio of the carbon to the metal is less than or equal to 0.1, and
the electroplating layer is free of void space.

17. The method of claim 16 , wherein a molecular weight of the accelerator additive is less than a molecular weight of the suppressor additive.

18. The method of claim 16 , wherein the accelerator additive comprises pendant sulfur atoms.

19. The method of claim 16 , wherein contacting the surface of the recessed feature with the electroplating solution comprises contacting the surface with the electroplating solution prior to electroplating the metal.

20. The method of claim 16 , comprising:
applying a seed layer to the surface prior to contacting the surface with the electroplating solution.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Nian Jun-Nan
• Wu Jyun-Ru
• Jangjian Shiu-Ko
• Peng Yu-Ren
• Hung Chi-Cheng
• Wang Yu-Sheng

Classifications

• H02G3/081

  Bases, casings or covers · CPC title

• C25D3/38

  of copper · CPC title

• H01R13/506

  assembled by snap action of the parts · CPC title

• H01R4/2433 Primary

  one part of the base being movable to push the cable into the slot · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title