Transistor including wrap around source and drain contacts
US-12142689-B2 · Nov 12, 2024 · US
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Ma Sean patents
Ma Sean is listed as an inventor on 45 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Ma Sean |
| Total patents | 45 |
| First publication | Oct 3, 2019 |
| Latest publication | Nov 12, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Vertically stacked finFETs and shared gate patterning
US-12100623-B2 · Sep 24, 2024 · US
Multi-dielectric gate stack for crystalline thin film transistors
US-12009433-B2 · Jun 11, 2024 · US
Channel structures for thin-film transistors
US-11881517-B2 · Jan 23, 2024 · US
Vertical multi-gate thin film transistors
US-11862729-B2 · Jan 2, 2024 · US
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
US-11756998-B2 · Sep 12, 2023 · US
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
US-11695081-B2 · Jul 4, 2023 · US
Single-sided nanosheet transistors
US-2023114214-A1 · Apr 13, 2023 · US
Gate-all-around integrated circuit structures having vertically discrete source or drain structures
US-2023074199-A1 · Mar 9, 2023 · US
Device with air-gaps to reduce coupling capacitance and process for forming such
US-11574910-B2 · Feb 7, 2023 · US
Recent patents
Latest publications not already listed above.
Transistor including wrap around source and drain contacts
US-2023006067-A1 · Jan 5, 2023 · US
Gate-all-around integrated circuit structures having vertically discrete source or drain structures
US-11527612-B2 · Dec 13, 2022 · US
Removal of a bottom-most nanowire from a nanowire device stack
US-11527613-B2 · Dec 13, 2022 · US
Epitaxial layers on contact electrodes for thin- film transistors
US-11522060-B2 · Dec 6, 2022 · US
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
US-11508577-B2 · Nov 22, 2022 · US
Vertically stacked finfets & shared gate patterning
US-2022336284-A1 · Oct 20, 2022 · US
Transistor including wrap around source and drain contacts
US-11476366-B2 · Oct 18, 2022 · US
Vertically stacked finFETs and shared gate patterning
US-11404319-B2 · Aug 2, 2022 · US
Channel structures for thin-film transistors
US-2022238685-A1 · Jul 28, 2022 · US
Contact electrodes and dielectric structures for thin film transistors
US-11398560-B2 · Jul 26, 2022 · US
Stacked nanowire transistor structure with different channel geometries for stress
US-11367722-B2 · Jun 21, 2022 · US
Non-planar semiconductor device including a replacement channel structure
US-11355621-B2 · Jun 7, 2022 · US
Channel structures for thin-film transistors
US-11335789-B2 · May 17, 2022 · US
Vertical multi-gate thin film transistors
US-2022149208-A1 · May 12, 2022 · US
Source-channel junction for iii-v metal-oxide-semiconductor field effect transistors (mosfets)
US-2022140076-A1 · May 5, 2022 · US
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
US-11257904-B2 · Feb 22, 2022 · US
Vertical multi-gate thin film transistors
US-11245038-B2 · Feb 8, 2022 · US
Removal of a bottom-most nanowire from a nanowire device stack
US-2021159312-A1 · May 27, 2021 · US
Removal of a bottom-most nanowire from a nanowire device stack
US-10892326-B2 · Jan 12, 2021 · US
Device with air-gaps to reduce coupling capacitance and process for forming such
US-2020411526-A1 · Dec 31, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 42 |
| Dewey Gilbert | 3 |
| Ma Sean | 3 |
| Ghani Tahir | 3 |
| Le Van H | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/62 | 23 |
| H10D62/151 | 17 |
| H01L29/0847 | 15 |
| H10D64/017 | 15 |
| H10D30/024 | 15 |