Method for preparing compound crystal via melt migration under supergravity
US-2025376784-A1 · Dec 11, 2025 · US
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Li Xiaolan patents
Li Xiaolan is listed as an inventor on 28 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Li Xiaolan |
| Total patents | 28 |
| First publication | Jun 7, 2016 |
| Latest publication | Dec 11, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Device and method for centrifugally synthesizing and growing compound crystal
US-2025369149-A1 · Dec 4, 2025 · US
Injection synthesis method for semiconductor compound
US-2025369150-A1 · Dec 4, 2025 · US
Crystal growth device and method with temperature gradient control
US-2025369148-A1 · Dec 4, 2025 · US
Rocking type seed crystal surface corrosion, cleaning and drying device and process method
US-12486598-B2 · Dec 2, 2025 · US
Method for cutting substrate wafer from indium phosphide crystal bar
US-12285819-B2 · Apr 29, 2025 · US
Device and method for continuous VGF crystal growth through reverse injection synthesis
US-12188145-B2 · Jan 7, 2025 · US
Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion
US-2024352624-A1 · Oct 24, 2024 · US
Process for synthesizing indium phosphide by liquid phosphorus injection method
US-12116690-B2 · Oct 15, 2024 · US
Apparatus for preparing a single crystal comprising a volatilization chamber and a plurality of crystal pieces fixed by combined fixtures located in a solid connection chamber
US-12098478-B2 · Sep 24, 2024 · US
Recent patents
Latest publications not already listed above.
Purification apparatus and purification method for non-metal semiconductor material
US-2024228286-A1 · Jul 11, 2024 · US
Large-scale compound semiconductor single crystal growth system and method
US-2024229291-A1 · Jul 11, 2024 · US
Method for preparing compound semiconductor crystal by combining continuous lec and vgf after injection synthesis
US-2024209545-A1 · Jun 27, 2024 · US
Polishing Device for Indium Phosphide Substrate, and Polishing Process
US-2024035192-A1 · Feb 1, 2024 · US
Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture
US-11781240-B2 · Oct 10, 2023 · US
Growth Device and Method for Low-Stress Crystals
US-2023069057-A1 · Mar 2, 2023 · US
Process for synthesizing indium phosphide by liquid phosphorus injection method
US-2023055938-A1 · Feb 23, 2023 · US
Rocking type seed crystal surface corrosion, cleaning and drying device and process method
US-2023038976-A1 · Feb 9, 2023 · US
Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture
US-2022081799-A1 · Mar 17, 2022 · US
Apparatus for preparing large-size single crystal
US-2022074073-A1 · Mar 10, 2022 · US
Method for cutting substrate wafer from indium phosphide crystal bar
US-2022072660-A1 · Mar 10, 2022 · US
Device and Method for Continuous VGF Crystal Growth through Reverse Injection Synthesis
US-2021285123-A1 · Sep 16, 2021 · US
Transparent constraint apparatus for normal deformation of planar model
US-10731962-B1 · Aug 4, 2020 · US
Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis
US-10519563-B2 · Dec 31, 2019 · US
Device and method for continuous vgf crystal growth through rotation after horizontal injection synthesis
US-2019352794-A1 · Nov 21, 2019 · US
Volume display method and apparatus
US-9602942-B2 · Mar 21, 2017 · US
Volume display method and apparatus
US-2016286328-A1 · Sep 29, 2016 · US
Method for determining lightning hazard distribution of power network
US-9360352-B2 · Jun 7, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| The 13Th Research Institute Of China Electronics Tech Group Corporation | 24 |
| Hisense Co Ltd | 3 |
| Univ China Mining | 1 |
| Chen Jiahong | 1 |
| Wang Jian | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.