Crystal growth device and method with temperature gradient control
US-2025369148-A1 · Dec 4, 2025 · US
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Single-crystal growth under a protective fluid
Single-crystal growth under a protective fluid · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B27/00 |
| Official title | Single-crystal growth under a protective fluid |
| Display label | Single-crystal growth under a protective fluid |
| Total patents | 23 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 1 |
| 2017 | 1 |
| 2018 | 1 |
| 2019 | 3 |
| 2020 | 2 |
| 2021 | 3 |
| 2022 | 1 |
| 2023 | 4 |
| 2024 | 2 |
| 2025 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
GaAs wafer and method of producing GaAs ingot
US-12467160-B2 · Nov 11, 2025 · US
Uses of spinel-type single crystals as ferroelectrics and relaxor ferroelectrics, energy storage material and rechargeable energy storage product
US-2025163610-A1 · May 22, 2025 · US
Device and method for continuous VGF crystal growth through reverse injection synthesis
US-12188145-B2 · Jan 7, 2025 · US
Method for continuous epitaxy of carbon film
US-2024367981-A1 · Nov 7, 2024 · US
Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion
US-2024352624-A1 · Oct 24, 2024 · US
Enhanced crystal nucleation
US-2023416303-A1 · Dec 28, 2023 · US
GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT
US-2023392291-A1 · Dec 7, 2023 · US
GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER
US-2023243067-A1 · Aug 3, 2023 · US
Enhanced crystal nucleation
US-11697671-B2 · Jul 11, 2023 · US
Gallium arsenide single crystal substrate
US-11319646-B2 · May 3, 2022 · US
Gallium arsenide single crystal substrate
US-2021310155-A1 · Oct 7, 2021 · US
Device and Method for Continuous VGF Crystal Growth through Reverse Injection Synthesis
US-2021285123-A1 · Sep 16, 2021 · US
Enhanced crystal nucleation
US-2021107936-A1 · Apr 15, 2021 · US
Gallium arsenide crystal body and gallium arsenide crystal substrate
US-10822722-B2 · Nov 3, 2020 · US
Growth container
US-10533265-B2 · Jan 14, 2020 · US
Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis
US-10519563-B2 · Dec 31, 2019 · US
Device and method for continuous vgf crystal growth through rotation after horizontal injection synthesis
US-2019352794-A1 · Nov 21, 2019 · US
Gallium arsenide crystal body and gallium arsenide crystal substrate
US-2019264348-A1 · Aug 29, 2019 · US
Growth container
US-2018010262-A1 · Jan 11, 2018 · US