Device and method for continuous VGF crystal growth through reverse injection synthesis

Patent metadata

Field	Value
Publication number	US-12188145-B2
Application number	US-201816627919-A
Country	US
Kind code	B2
Filing date	Dec 21, 2018
Priority date	Dec 14, 2018
Publication date	Jan 7, 2025
Grant date	Jan 7, 2025

Abstract

The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and a gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.

First claim

The invention claimed is:

1. A device for continuous VGF crystal growth, comprising a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and a gas pressure regulation system,
characterized in that:
the crucible, disposed in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through one or more capillary pores;
a relationship between a radius r of the one or more capillary pores and h is as follows:

ρ
⁢
g
⁢
h

<

2
⁢
σ

r

where ρ is a density of a melt, g is the acceleration of gravity, σ is an interfacial tension of the melt, and h is a height of the melt in the synthesis unit in the crucible; and
each of the one or more capillary pores has the radius r of 0.1 mm to 0.15 mm;
wherein the one or more capillary pores enable gasified volatile element to enter the synthesis unit from the crystal growth unit and the melt to enter the crystal growth unit from the growth unit; and
wherein the heating system is configured to control temperatures of each of a first plurality of heating zones of the crystal growth unit and temperatures of each of a second plurality of heating zones of the synthesis unit to first cause the gasified volatile element to be injected from the crystal growth unit into the synthesis unit through the one or more capillary pores and then the melt to be dropped from the synthesis unit into the crystal growth unit through the one or more capillary pores.

2. The device according to claim 1 , characterized in that: the number of the capillary pores is more than one.

3. The device according to claim 1 , characterized in that: a heat insulation layer is provided between the synthesis unit and the crystal growth unit of the crucible.

4. The device according to claim 1 , characterized in that: an observation window is provided at the top of the furnace body; the heating system comprises a heating wire arranged on the periphery of the crucible, the temperature control system comprises thermocouples, and the gas pressure regulation system comprises a gas charge and discharge pipe probing into the crucible.

Assignees

• The 13Th Research Institute Of China Electronics Tech Group Corporation

Inventors

• Wang Shujie
• Sun Niefeng
• Sun Tongnian
• Liu Huisheng
• Shi Yanlei
• Shao Huimin
• Fu Lijie
• Jiang Jian
• Zhang Xiaodan
• Li Xiaolan
• Wang Yang

Classifications

• C30B29/40

  AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} · CPC title

• C30B27/00

  Single-crystal growth under a protective fluid · CPC title

• C30B11/007

  Mechanisms for moving either the charge or the heater · CPC title

• C30B11/006

  Controlling or regulating · CPC title

• C30B11/002

  Crucibles or containers for supporting the melt · CPC title