Injection synthesis method for semiconductor compound

Patent metadata

Field	Value
Publication number	US-2025369150-A1
Application number	US-202218995072-A
Country	US
Kind code	A1
Filing date	Dec 14, 2022
Priority date	Jul 15, 2022
Publication date	Dec 4, 2025
Grant date	—

Abstract

A semiconductor compound injection synthesis method relating to the synthesis of semiconductor materials, being implemented on the basis of a synthesis system. The synthesis system adopts an open gas source device. The method includes: placing materials, probing the open gas source device, melting metal materials, and gasifying the gas source material to complete the synthesis. Beneficial effects: in the synthesis method of the present invention, the lower part of the baffle of the open gas source device is a reaction chamber. During the synthesis, the contact area between the gas source material and the melt is at least 22 times the contact area of the traditional double-tube method. In the present invention, there is no isolation of the covering agent in the reaction chamber, and the two reaction elements are always in contact at the liquid surface. In a specific implementation case, when the method of the present invention is used to synthesize phosphating steel materials, compared with the traditional double-tube injection method, the efficiency of the method is improved by 12 times.

First claim

1 . A semiconductor compound injection synthesis method, completed by a synthesis system characterized in that:
the synthesis system adopts an open gas source device, the open gas source device is sealed at a top and open at a bottom, a diameter of the opening is smaller than an inner diameter of crucible, a baffle with air holes is set in a middle of the open gas source device, and a gas source heater is set on a periphery of the open gas source device; the method comprising: 1-1, placing gas source material required for synthesis on the baffle of the open gas source device, and inserting the open gas source device into the crucible, 1-2, treating metal material required for synthesis, and placing the treated metal material into the crucible, 1-3, placing a covering agent on the metal material, 1-4, turning on a crucible heater, 1-5, after the metal material is melted, lowering the open gas source device that its lower edge is close to the bottom of the crucible, 1-6, raising a temperature of the crucible to the synthesis temperature, 1-7, turning on a gas source heater, and the gas source material is heated to a gasification temperature, 1-8, controlling a power of the gas source heater and adjusting a gasification rate of the gas source material, 1-9, finishing gasifying the gas source material, ending the reaction.

2 . The semiconductor compound injection synthesis method according to claim 1 is characterized in that:
in step 1-8, a principle of controlling the power of the gas source heater is to keep a melt level in the open gas source device and a melt level in the crucible basically consistent.

3 . The semiconductor compound injection synthesis method according to claim 1 is characterized in that:
in the open gas source device, a vent hole is provided at a lower part adjacent to the baffle, and the vent hole is opened and closed by a floating ball.

4 . The semiconductor compound injection synthesis method according to claim 3 , characterized in that:
two vents are provided, which are divided into an air inlet and an exhaust hole according to their functions.

5 . The semiconductor compound injection synthesis method according to claim 4 , characterized in that:
the exhaust hole is externally connected to an exhaust pipe, which extends to the lower edge of the open gas source device.

6 . The semiconductor compound injection synthesis method according to claim 5 , characterized in that:
one to six exhaust pipes are provided, which are evenly arranged along a periphery of the open gas source device.

7 . The semiconductor compound injection synthesis method according to claim 4 , characterized in that:
when the exhaust hole is blocked, a position of the float ball controlling the exhaust hole is lower than a position of the exhaust hole.

8 . The semiconductor compound injection synthesis method according to claim 1 , characterized in that: the open gas source device is a barrel structure.

9 . The semiconductor compound injection synthesis method according to claim 1 , characterized in that: the open gas source device comprises two barrel structures, and a diameter of the barrel below the baffle is larger than a diameter of the barrel above the baffle.

10 . The semiconductor compound injection synthesis method according to claim 1 , characterized in that: the open gas source device has a barrel structure above the baffle and a bell-mouth shape below the baffle.

Assignees

• The 13Th Research Institute Of China Electronics Tech Group Corporation

Inventors

• Shi Yanlei
• Sun Niefeng
• Wang Shujie
• Liu Zheng
• Fu Lijie
• Xu Chengyan
• Qin Jingkai
• Shao Huimin
• Wang Yang
• Li Xiaolan
• Liu Huisheng
• Zhang Xiaodan
• Zou Xuefeng
• Wang Wei
• Zhang Xin
• Li Yaqi
• Zhao Hongfei
• Kang Yong

Classifications

• C23C14/243

  Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title

• C30B23/066 Primary

  Heating of the material to be evaporated · CPC title

• C30B29/52

  Alloys · CPC title

• C30B11/006

  Controlling or regulating · CPC title

• C30B11/065 Primary

  before crystallising, e.g. synthesis · CPC title