Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
adding crystallising materials or reactants forming it in situ to the melt
adding crystallising materials or reactants forming it in situ to the melt · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B15/02 |
| Official title | adding crystallising materials or reactants forming it in situ to the melt |
| Display label | adding crystallising materials or reactants forming it in situ to the melt |
| Total patents | 198 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 12 |
| 2016 | 12 |
| 2017 | 14 |
| 2018 | 14 |
| 2019 | 12 |
| 2020 | 13 |
| 2021 | 17 |
| 2022 | 18 |
| 2023 | 30 |
| 2024 | 33 |
| 2025 | 19 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Apparatus for manufacturing silicon single crystal and melt inlet pipe of the same
US-10415150-B2 · Sep 17, 2019 · US
Method of manufacturing cz silicon wafers, and method of manufacturing a semiconductor device
US-2019249330-A1 · Aug 15, 2019 · US
Polycrystalline Silicon Fragment, Method for Manufacturing Polycrystalline Silicon Fragment, and Polycrystalline Silicon Block Fracture Device
US-2019240669-A1 · Aug 8, 2019 · US
Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber
US-10273596-B2 · Apr 30, 2019 · US
Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device
US-10273597-B2 · Apr 30, 2019 · US
Crystal growth atmosphere for oxyorthosilicate materials production
US-10227709-B2 · Mar 12, 2019 · US
System for forming an ingot including crucible and conditioning members
US-10221500-B2 · Mar 5, 2019 · US
Methods for reducing deposits in ingot puller exhaust systems
US-10145023-B2 · Dec 4, 2018 · US
Method for producing single crystal
US-2018340269-A1 · Nov 29, 2018 · US
Methods for reducing the erosion rate of a crucible during crystal pulling
US-10100428-B2 · Oct 16, 2018 · US
Recharge tube stocker
US-2018273299-A1 · Sep 27, 2018 · US
Silicon single crystal growing apparatus and silocon single crystal growing method using same
US-10072352-B2 · Sep 11, 2018 · US
Method of production of langatate-based single crystal and langatate-based single crystal
US-2018245237-A1 · Aug 30, 2018 · US
Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber
US-2018237948-A1 · Aug 23, 2018 · US
Method for growing single crystal
US-2018237937-A1 · Aug 23, 2018 · US
Crystal pulling system and method including crucible and conditioning members
US-2018187329-A1 · Jul 5, 2018 · US
Method for growing silicon carbide crystal
US-9951439-B2 · Apr 24, 2018 · US
Method for growing silicon carbide crystal
US-9945047-B2 · Apr 17, 2018 · US
Apparatus for manufacturing silicon single crystal and melt inlet pipe of the same
US-2018066377-A1 · Mar 8, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B15/02?
- CPC C30B15/02 is the Cooperative Patent Classification code for “adding crystallising materials or reactants forming it in situ to the melt.”
- How many patents are filed under CPC C30B15/02 (adding crystallising materials or reactants forming it in situ to the melt)?
- Our database includes 198 publications tagged with this CPC code.
- Is patent activity under CPC C30B15/02 growing?
- Publication counts under this code: 33 in 2024 vs 19 in 2025 (latest complete years).