Device and method for centrifugally synthesizing and growing compound crystal
US-2025369149-A1 · Dec 4, 2025 · US
by pulling from a melt
by pulling from a melt · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B27/02 |
| Official title | by pulling from a melt |
| Display label | by pulling from a melt |
| Total patents | 30 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2016 | 2 |
| 2017 | 1 |
| 2018 | 4 |
| 2019 | 1 |
| 2020 | 1 |
| 2021 | 4 |
| 2022 | 2 |
| 2023 | 3 |
| 2024 | 8 |
| 2025 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method and system for liquid encapsulated growth of cadmium zinc telluride crystals
US-12338549-B1 · Jun 24, 2025 · US
Scintillation crystal and preparation method and preparation device thereof
US-2025116031-A1 · Apr 10, 2025 · US
Methods and devices for growing scintillation crystals with multi-component garnet structure
US-2025019862-A1 · Jan 16, 2025 · US
Methods and devices for growing scintillation crystals with multi-component garnet structure
US-12152315-B2 · Nov 26, 2024 · US
Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion
US-2024352624-A1 · Oct 24, 2024 · US
Process for synthesizing indium phosphide by liquid phosphorus injection method
US-12116690-B2 · Oct 15, 2024 · US
Ingot puller apparatus and methods for growing a single crystal silicon ingot with reduced lower chamber deposits
US-2024247398-A1 · Jul 25, 2024 · US
Large-scale compound semiconductor single crystal growth system and method
US-2024229291-A1 · Jul 11, 2024 · US
Method, apparatus, system and computer storage medium of controlling crystal growth
US-2024218556-A1 · Jul 4, 2024 · US
Method for preparing compound semiconductor crystal by combining continuous lec and vgf after injection synthesis
US-2024209545-A1 · Jun 27, 2024 · US
Method and system for liquid encapsulated growth of cadmium zinc telluride crystals
US-11866848-B1 · Jan 9, 2024 · US
Indium phosphide substrate, semiconductor epitaxial wafer, method for producing indium phosphide single-crystal ingot and method for producing indium phosphide substrate
US-2023374700-A1 · Nov 23, 2023 · US
Growth Device and Method for Low-Stress Crystals
US-2023069057-A1 · Mar 2, 2023 · US
Process for synthesizing indium phosphide by liquid phosphorus injection method
US-2023055938-A1 · Feb 23, 2023 · US
Compound semiconductor and method for producing single crystal of compound semiconductor
US-11371164-B2 · Jun 28, 2022 · US
Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
US-11349037-B2 · May 31, 2022 · US
Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
US-11211505-B2 · Dec 28, 2021 · US
Methods and devices for growing scintillation crystals with multi-component garnet structure
US-2021230767-A1 · Jul 29, 2021 · US
Compound semiconductor and method for producing single crystal of compound semiconductor
US-2021108335-A1 · Apr 15, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B27/02?
- CPC C30B27/02 is the Cooperative Patent Classification code for “by pulling from a melt.”
- How many patents are filed under CPC C30B27/02 (by pulling from a melt)?
- Our database includes 30 publications tagged with this CPC code.
- Is patent activity under CPC C30B27/02 growing?
- Publication counts under this code: 8 in 2024 vs 4 in 2025 (latest complete years).