Junction diode isolation
US-2026096187-A1 · Apr 2, 2026 · US
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Kim Sunglyong patents
Kim Sunglyong is listed as an inventor on 58 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Kim Sunglyong |
| Total patents | 58 |
| First publication | Mar 24, 2015 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Method for forming a field-effect transistor having a fractionally enhanced body structure
US-12563767-B2 · Feb 24, 2026 · US
Diode trench isolation for improved breakdown voltage uniformity
US-2025366084-A1 · Nov 27, 2025 · US
Diode with intrinsic epitaxial layer
US-2025221052-A1 · Jul 3, 2025 · US
Electrostatic discharge guard ring with snapback protection
US-12336299-B2 · Jun 17, 2025 · US
Electrostatic discharge protection devices with low capacitance
US-2025126879-A1 · Apr 17, 2025 · US
Sense transistor with lower spreading resistance
US-2025048721-A1 · Feb 6, 2025 · US
Integrated boot diode with high forward bias capability
US-2024405017-A1 · Dec 5, 2024 · US
Integrated circuit with improved isolation
US-2024363394-A1 · Oct 31, 2024 · US
Electrostatic discharge guard ring with complementary drain extended devices
US-12094970-B2 · Sep 17, 2024 · US
Recent patents
Latest publications not already listed above.
Trench shielded transistor
US-2024113217-A1 · Apr 4, 2024 · US
Electrostatic discharge guard ring with snapback protection
US-2023395589-A1 · Dec 7, 2023 · US
Trench shield isolation layer
US-11791198-B2 · Oct 17, 2023 · US
Electrostatic discharge guard ring with snapback protection
US-11764208-B2 · Sep 19, 2023 · US
Vertical trench gate mosfet with integrated schottky diode
US-2023246107-A1 · Aug 3, 2023 · US
Electrostatic discharge protection devices with high current capability
US-2023223395-A1 · Jul 13, 2023 · US
Semiconductor devices with high current capability for electrostatic discharge or surge protection
US-2023223393-A1 · Jul 13, 2023 · US
Vertical trench gate MOSFET with integrated Schottky diode
US-11658241-B2 · May 23, 2023 · US
Electrostatic discharge guard ring with snapback protection
US-2023132375-A9 · Apr 27, 2023 · US
Field-effect transistor having fractionally enhanced body structure
US-2023101610-A1 · Mar 30, 2023 · US
Field plate arrangement for trench gate fet
US-2023087151-A1 · Mar 23, 2023 · US
High voltage finger layout transistor
US-2023061337-A1 · Mar 2, 2023 · US
Drain-extended transistor
US-11456381-B2 · Sep 27, 2022 · US
Vertical trench gate fet with split gate
US-2022223731-A1 · Jul 14, 2022 · US
Trench shield isolation layer
US-2022208601-A1 · Jun 30, 2022 · US
Drain-extended transistor
US-2022190158-A1 · Jun 16, 2022 · US
High voltage lateral junction diode device
US-11322610-B2 · May 3, 2022 · US
Semiconductor device including a lateral insulator
US-11322594-B2 · May 3, 2022 · US
Trench shield isolation layer
US-11302568-B2 · Apr 12, 2022 · US
Semiconductor device including a lateral insulator
US-2022052165-A1 · Feb 17, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Texas Instruments Inc | 55 |
| Fairchild Semiconductor | 3 |
| Kim Sunglyong | 1 |
| Kim Jongjib | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/393 | 24 |
| H10D62/158 | 24 |
| H10D30/65 | 23 |
| H10D64/516 | 19 |
| H01L29/1095 | 19 |