Gate-all-around integrated circuit structures having doped subfin
US-12575151-B2 · Mar 10, 2026 · US
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Keys Patrick patents
Keys Patrick is listed as an inventor on 17 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Keys Patrick |
| Total patents | 17 |
| First publication | Oct 31, 2019 |
| Latest publication | Mar 10, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers
US-12484266-B2 · Nov 25, 2025 · US
Fin doping and integrated circuit structures resulting therefrom
US-12199098-B2 · Jan 14, 2025 · US
Transistor structures with reduced source/drain leakage through backside treatment of subfin semiconductor material
US-2023097948-A1 · Mar 30, 2023 · US
Integrated circuit structures having metal-containing source or drain structures
US-2023095007-A1 · Mar 30, 2023 · US
Gate-all-around integrated circuit structures having doped subfin
US-2023088753-A1 · Mar 23, 2023 · US
Transistors with source & drain etch stop
US-2022415708-A1 · Dec 29, 2022 · US
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers
US-2022416024-A1 · Dec 29, 2022 · US
Removal of a bottom-most nanowire from a nanowire device stack
US-11527613-B2 · Dec 13, 2022 · US
Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material
US-11495683-B2 · Nov 8, 2022 · US
Recent patents
Latest publications not already listed above.
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers
US-11469299-B2 · Oct 11, 2022 · US
Fin doping and integrated circuit structures resulting therefrom
US-2022310601-A1 · Sep 29, 2022 · US
Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material
US-2021257492-A1 · Aug 19, 2021 · US
Removal of a bottom-most nanowire from a nanowire device stack
US-2021159312-A1 · May 27, 2021 · US
Removal of a bottom-most nanowire from a nanowire device stack
US-10892326-B2 · Jan 12, 2021 · US
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers
US-2020105872-A1 · Apr 2, 2020 · US
Removal of a bottom-most nanowire from a nanowire device stack
US-2019333990-A1 · Oct 31, 2019 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 17 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/024 | 14 |
| B82Y10/00 | 13 |
| H10D30/014 | 13 |
| H10D30/6735 | 13 |
| H10D62/121 | 13 |