Substrate-less lateral diode integrated circuit structures
US-12507475-B2 · Dec 23, 2025 · US
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Jack Nathan patents
Jack Nathan is listed as an inventor on 30 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Jack Nathan |
| Total patents | 30 |
| First publication | Feb 4, 2016 |
| Latest publication | Dec 23, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact
US-12402349-B2 · Aug 26, 2025 · US
Substrate-less silicon controlled rectifier (scr) integrated circuit structures
US-2025261452-A1 · Aug 14, 2025 · US
Substrate-free integrated circuit structures
US-2025254993-A1 · Aug 7, 2025 · US
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures
US-12328947-B2 · Jun 10, 2025 · US
Substrate-free integrated circuit structures
US-12317590-B2 · May 27, 2025 · US
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact
US-12288789-B2 · Apr 29, 2025 · US
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact
US-2024145471-A1 · May 2, 2024 · US
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact
US-11908856-B2 · Feb 20, 2024 · US
Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact
US-2024055497-A1 · Feb 15, 2024 · US
Recent patents
Latest publications not already listed above.
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact
US-2024038889-A1 · Feb 1, 2024 · US
Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact
US-11837641-B2 · Dec 5, 2023 · US
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact
US-11824116-B2 · Nov 21, 2023 · US
Substrate-less FinFET diode architectures with backside metal contact and subfin regions
US-11652107-B2 · May 16, 2023 · US
Substrate-less nanowire-based lateral diode integrated circuit structures
US-2022416022-A1 · Dec 29, 2022 · US
Substrate-less diode, bipolar and feedthrough integrated circuit structures
US-2022415880-A1 · Dec 29, 2022 · US
Electrostatic discharge protection diode for back-side power delivery technologies and methods of fabrication
US-2022415877-A1 · Dec 29, 2022 · US
Substrate-less lateral diode integrated circuit structures
US-2022415925-A1 · Dec 29, 2022 · US
Substrate-less silicon controlled rectifier (scr) integrated circuit structures
US-2022415881-A1 · Dec 29, 2022 · US
Substrate-free integrated circuit structures
US-2022102385-A1 · Mar 31, 2022 · US
Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact
US-2021193807-A1 · Jun 24, 2021 · US
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact
US-2021193836-A1 · Jun 24, 2021 · US
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact
US-2021193652-A1 · Jun 24, 2021 · US
Substrate-less finfet diode architectures with backside metal contact and subfin regions
US-2020403007-A1 · Dec 24, 2020 · US
Integrated circuit protection during high-current ESD testing
US-10359461-B2 · Jul 23, 2019 · US
Integrated circuit protection during high-current esd testing
US-2018100883-A1 · Apr 12, 2018 · US
Integrated circuit protection during high-current esd testing
US-2018100884-A1 · Apr 12, 2018 · US
Integrated circuit protection during high-current ESD testing
US-9869708-B2 · Jan 16, 2018 · US
Integrated circuit protection during high-current ESD testing
US-9435841-B2 · Sep 6, 2016 · US
Integrated circuit protection during high-current esd testing
US-2016033564-A1 · Feb 4, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 24 |
| IBM | 6 |
| Chang Shunhua | 1 |
| Di Sarro James Paul | 1 |
| Gauthier Jr Robert J | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/121 | 18 |
| H10D30/6735 | 12 |
| H10D64/01 | 11 |
| H10D30/6757 | 11 |
| H10D30/43 | 11 |