Method for reducing defects of electronic components by a supercritical fluid
US-11101141-B2 · Aug 24, 2021 · US
of Group III-V semiconductors, e.g. to render them semi-insulating
of Group III-V semiconductors, e.g. to render them semi-insulating · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P95/408 |
| Official title | {of Group III-V semiconductors, e.g. to render them semi-insulating} |
| Display label | of Group III-V semiconductors, e.g. to render them semi-insulating |
| Total patents | 75 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 9 |
| 2016 | 15 |
| 2017 | 13 |
| 2018 | 11 |
| 2019 | 8 |
| 2020 | 3 |
| 2021 | 6 |
| 2022 | 4 |
| 2023 | 1 |
| 2024 | 3 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Control of p-contact resistance in a semiconductor light emitting device
US-2020373462-A1 · Nov 26, 2020 · US
Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US-10727049-B2 · Jul 28, 2020 · US
Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods
US-2020161142-A1 · May 21, 2020 · US
Method for reducing defects of electronic components by a supercritical fluid
US-2019341267-A1 · Nov 7, 2019 · US
Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US-10468245-B2 · Nov 5, 2019 · US
Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US-2019279869-A1 · Sep 12, 2019 · US
Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US-2019279868-A1 · Sep 12, 2019 · US
Semiconductor device and manufacturing method thereof
US-10388538-B2 · Aug 20, 2019 · US
Contact structure and extension formation for III-V nFET
US-10361307-B2 · Jul 23, 2019 · US
n-Type Electrode, Method for Manufacturing n-Type Electrode, and n-Type Laminated Structure wherein n-Type Electrode is Provided on n-Type Group III Nitride Single Crystal Layer
US-2019140065-A1 · May 9, 2019 · US
Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US-10192980-B2 · Jan 29, 2019 · US
Contact structure and extension formation for III-V nFET
US-10121703-B2 · Nov 6, 2018 · US
Aluminum-nitride buffer and active layers by physical vapor deposition
US-10109481-B2 · Oct 23, 2018 · US
Control of p-contact resistance in a semiconductor light emitting device
US-2018294379-A1 · Oct 11, 2018 · US
Semiconductor devices and methods for manufacturing the same
US-10032938-B1 · Jul 24, 2018 · US
Contact structure and extension formation for iii-v nfet
US-2018166561-A1 · Jun 14, 2018 · US
Control of P-contact resistance in a semiconductor light emitting device
US-9991419-B2 · Jun 5, 2018 · US
Method for treating a gallium nitride layer comprising dislocations
US-9991341-B2 · Jun 5, 2018 · US
Semiconductor device and method of fabricating the same
US-9929239-B2 · Mar 27, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P95/408?
- CPC H10P95/408 is the Cooperative Patent Classification code for “of Group III-V semiconductors, e.g. to render them semi-insulating.”
- How many patents are filed under CPC H10P95/408 (of Group III-V semiconductors, e.g. to render them semi-insulating)?
- Our database includes 75 publications tagged with this CPC code.
- Is patent activity under CPC H10P95/408 growing?
- Publication counts under this code: 3 in 2024 vs 2 in 2025 (latest complete years).