Aluminum-nitride buffer and active layers by physical vapor deposition

Patent metadata

Field	Value
Publication number	US-10109481-B2
Application number	US-201314410790-A
Country	US
Kind code	B2
Filing date	Jul 1, 2013
Priority date	Jul 2, 2012
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

First claim

What is claimed is:

1. A method for fabricating a device, comprising:
treating a surface of one or more substrates in a first processing chamber;
transferring the one or more substrates from the first processing chamber to a second processing chamber in a controlled environment; and
depositing a crystalline aluminum-nitride layer on the one or more substrates in the second processing chamber that has one or more walls that define a processing region, wherein depositing the crystalline aluminum-nitride layer comprises:
biasing a target that has a surface that is in contact with the processing region, wherein biasing the target comprises delivering a pulsed DC signal at a power of between 4 kWatts and 6 kWatts, and wherein the target comprises aluminum;
flowing a first gas that comprises nitrogen into the processing region;
flowing a second gas into the processing region, wherein the second gas comprises argon, krypton or neon;
biasing an electrode to form a negative substrate bias potential on the one or more substrates that are disposed over a substrate support, wherein biasing the electrode comprises creating a floating potential on the one or more substrates that varies from between −300 volts and −1 volt, wherein biasing the electrode comprises biasing the electrode for a first period of time that occurs before biasing the target;

transferring the one or more substrates from the second processing chamber to a third processing chamber; and
forming a group III-nitride layer on the crystalline aluminum nitride layer in the third processing chamber, wherein the crystalline aluminum-nitride layer has a surface roughness less than three percent of a thickness of the crystalline aluminum-nitride layer, and wherein forming the group III-nitride layer comprises:
delivering a metal containing precursor and a nitrogen containing gas to a surface of each of the one or more substrates.

2. The method of claim 1 , wherein delivering the pulsed DC signal comprises delivering the pulsed DC signal at a pulse frequency of between 5 kHz and 200 kHz.

3. The method of claim 1 , wherein delivering the pulsed DC signal at the power of between 4 kWatts and 6 kWatts is at a duty cycle between 80% and 95%.

4. A method for fabricating a device, comprising:
treating a surface of one or more substrates in a first processing chamber, wherein treating the surface of the one or more substrates comprises degassing the one or more substrates or sputter etching a surface of the one or more substrates;
transferring the one or more substrates from the first processing chamber to a second processing chamber in a controlled environment;
heating the one or more substrates to a temperature between 200° C. and 1000° C. before biasing the target;
controlling a pressure within the processing region while biasing the target to a pressure between 0.1 mTorr and 200 mTorr; and
depositing the crystalline aluminum nitride layer at a deposition rate between 7 angstroms per second and 20 angstroms per second, wherein the processing chamber has one or more walls that define a processing region, and wherein depositing the crystalline aluminum-nitride layer comprises:
biasing a target that has a surface that is in contact with the processing region, wherein biasing the target comprises delivering a pulsed DC signal and the target comprises aluminum, wherein biasing the target comprises delivering a pulsed DC signal at a power between 4 kWatts and 6 kWatts, flowing a first gas that comprises nitrogen into the processing region;
flowing a second gas into the processing region, wherein the second gas comprises argon, krypton or neon; and
biasing an electrode to form a negative substrate bias potential on the one or more substrates that are disposed over a substrate support, wherein biasing the electrode comprises creating a floating potential on the one or more substrates that varies from between −300 volts and −1 volt.

5. The method of claim 4 , wherein biasing the electrode occurs between 1 and 10 seconds before biasing the target.

6. The method of claim 4 , wherein the pressure within the processing region is less than 10 mTorr.

7. The method of claim 6 , further comprising adjusting the argon to nitrogen gas composition ratio of 60% to 95% N 2 in the processing region.

8. The method of claim 7 , wherein the temperature of the one or more substrates is heated to a temperature between 350° C. and 450° C.

9. The method of claim 4 , wherein delivering the pulsed DC signal is performed using a duty cycle of between 80% and 95%.

10. The method of claim 9 , wherein delivering the pulsed DC signal is performed at a pulse frequency of between 5 kHz and 200 kHz.

11. The method of claim 10 , further comprising adjusting the argon to nitrogen gas composition ratio of 60% to 95% N 2 in the processing region.

12. The method of claim 4 , wherein the first gas is selected from the group consisting of nitrogen dioxide (NO 2 ) and nitric oxide (NO).

13. The method of claim 4 , wherein the pulsed DC signal applied to the target includes a signal that comprises a plurality of alternating first and second intervals, wherein during the first intervals a first negative DC bias voltage is applied to the target, and during the second intervals a DC bias voltage that is less negative than the first negative DC bias voltage is applied to the target.

14. The method of claim 13 , wherein the DC bias voltage applied to the target during the second intervals is a positive voltage.

15. The method of claim 13 , wherein biasing the electrode occurs between 1 and 10 seconds before biasing the target.

16. The method of claim 1 , wherein the crystalline aluminum-nitride layer having Al polarity has a stress between about 10 Gpa and about 10 Gpa.

Assignees

• Applied Materials Inc

Inventors

• Zhu Mingwei
• Patibandla Nag B
• Wang Rongjun
• Agrawal Vivek
• Subramani Anantha
• Diehl Daniel Lee
• Tang Xianmin

Classifications

• H10P95/408

  of Group III-V semiconductors, e.g. to render them semi-insulating · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3416 Primary

  Nitrides · CPC title