Method for manufacturing silicon wafer and silicon wafer
US-2024304458-A1 · Sep 12, 2024 · US
Method for reducing defects of electronic components by a supercritical fluid
US11101141B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11101141-B2 |
| Application number | US-201916511396-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 15, 2019 |
| Priority date | Jan 12, 2017 |
| Publication date | Aug 24, 2021 |
| Grant date | Aug 24, 2021 |
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Abstract
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A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H 2 S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.
First claim
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What is claimed is: 1. A method for reducing defects of an electronic component using a supercritical carbon dioxide fluid, comprising: recrystallizing and rearranging grains in a material layer of the electronic component by introducing the supercritical carbon dioxide fluid doped with H 2 S together with an electromagnetic wave into a cavity having a temperature above a critical temperature of the supercritical carbon dioxide fluid and a pressure above a critical pressure of the supercritical carbon dioxide fluid; wherein the electronic component is a gas sensor. 2. The method for reducing defects of the electronic component using the supercritical carbon dioxide fluid as claimed in claim 1 , wherein the cavity has the temperature of 77-1000 K. 3. The method for reducing defects of the electronic component using the supercritical carbon dioxide fluid as claimed in claim 1 , wherein the cavity has the pressure of 3-1000 atm.
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Classifications
Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices · CPC title
- H10P36/00Primary
Gettering within semiconductor bodies · CPC title
of Group III-V semiconductors, e.g. to render them semi-insulating · CPC title
Silicon carbide · CPC title
having trench gate electrodes, e.g. UMOS transistors · CPC title
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- What does patent US11101141B2 cover?
- A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H 2 S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure o…
- Who is the assignee on this patent?
- National Sun Yat Sen University, National Sun Yat Sen Univ Kz
- What technology area does this patent fall under?
- Primary CPC classification H10P36/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 24 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).