Organic light emitting diode display and method for manufacturing the same
US-9853245-B2 · Dec 26, 2017 · US
of masks comprising inorganic materials
of masks comprising inorganic materials · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P76/40 |
| Official title | of masks comprising inorganic materials |
| Display label | of masks comprising inorganic materials |
| Total patents | 294 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 20 |
| 2016 | 20 |
| 2017 | 28 |
| 2018 | 38 |
| 2019 | 37 |
| 2020 | 32 |
| 2021 | 34 |
| 2022 | 22 |
| 2023 | 16 |
| 2024 | 16 |
| 2025 | 29 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
High Durability Extreme Ultraviolet Photomask
US-2017351169-A1 · Dec 7, 2017 · US
High-voltage metal-oxide-semiconductor transistor and fabrication method thereof
US-2017345926-A1 · Nov 30, 2017 · US
Method for producing patterns
US-2017345655-A1 · Nov 30, 2017 · US
Method of fabricating semiconductor device with an overlay mask pattern
US-9812364-B2 · Nov 7, 2017 · US
Loading effect reduction through multiple coat-etch processes
US-2017309718-A1 · Oct 26, 2017 · US
Method of manufacturing semiconductor devices
US-9748140-B1 · Aug 29, 2017 · US
Lithographic technique for feature cut by line-end shrink
US-2017207081-A1 · Jul 20, 2017 · US
Pellicle and method for manufacturing the same
US-2017205705-A1 · Jul 20, 2017 · US
Loading effect reduction through multiple coat-etch processes
US-9711604-B1 · Jul 18, 2017 · US
Loading effect reduction through multiple coat-etch processes
US-2017194443-A1 · Jul 6, 2017 · US
Pattern forming method
US-9696628-B2 · Jul 4, 2017 · US
Method of fabricating semiconductor
US-2017125300-A1 · May 4, 2017 · US
Lithographic technique for feature cut by line-end shrink
US-9613850-B2 · Apr 4, 2017 · US
Pattern-forming method and resist underlayer film-forming composition
US-9607849-B2 · Mar 28, 2017 · US
Pattern forming method
US-2017076940-A1 · Mar 16, 2017 · US
FinFET structures having silicon germanium and silicon channels
US-9589848-B2 · Mar 7, 2017 · US
Semiconductor structure and process thereof
US-9570339-B2 · Feb 14, 2017 · US
Masking methods for ALD processes for electrode-based devices
US-2017025272-A1 · Jan 26, 2017 · US
Selective deposition of silicon oxide films
US-2017004974-A1 · Jan 5, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P76/40?
- CPC H10P76/40 is the Cooperative Patent Classification code for “of masks comprising inorganic materials.”
- How many patents are filed under CPC H10P76/40 (of masks comprising inorganic materials)?
- Our database includes 294 publications tagged with this CPC code.
- Is patent activity under CPC H10P76/40 growing?
- Publication counts under this code: 16 in 2024 vs 29 in 2025 (latest complete years).