Method of manufacturing semiconductor devices

Patent metadata

Field	Value
Publication number	US-9748140-B1
Application number	US-201615154677-A
Country	US
Kind code	B1
Filing date	May 13, 2016
Priority date	May 13, 2016
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

A method for use in manufacturing semiconductor devices includes providing a wafer on a support, covering a central wafer portion of the wafer, and cutting a marginal wafer portion of the wafer from the wafer. According to an embodiment of an apparatus, the apparatus includes a support configured to support a wafer, a masking device configured to cover a central wafer portion of the wafer, and a cutting device configured to cut a marginal wafer portion of the wafer from the wafer.

First claim

The invention claimed is:

1. A method, comprising:
providing a wafer on a support;
covering a central wafer portion of the wafer by setting a masking device over the central wafer portion of the wafer and leaving a space between a surface of the wafer at the central wafer portion of the wafer and the masking device;
pressurizing the space between the surface of the wafer at the central wafer portion of the wafer and the masking device; and
cutting a marginal wafer portion of the wafer from the wafer.

2. The method of claim 1 , wherein the central wafer portion of the wafer has a homogeneous thickness.

3. The method of claim 2 , wherein a thickness of the marginal wafer portion of the wafer is greater than a thickness of the central wafer portion of the wafer.

4. The method of claim 3 , wherein a contour of the masking device follows a circumferential contour of a step formed where the central wafer portion of the wafer abuts the marginal wafer portion of the wafer.

5. The method of claim 1 , wherein a stiffness of the masking device is greater than a stiffness of the central wafer portion of the wafer.

6. The method of claim 1 , wherein the masking device comprises a plate formed from a material selected from a group of materials consisting of metal, plastic and any combination or derivative of these materials.

7. The method of claim 1 , wherein the masking device comprises an opening that is configured as a duct for a gas, and wherein pressurizing the space between the surface of the wafer at the central wafer portion of the wafer and the masking device comprises providing the gas through the opening and into the space between the surface of the wafer at the central wafer portion of the wafer and the masking device.

8. The method of claim 1 , wherein setting the masking device over the central wafer portion of the wafer comprises setting the masking device onto a surface of the wafer at the central wafer portion of the wafer.

9. The method of claim 1 , wherein cutting the marginal wafer portion of the wafer from the wafer comprises cutting the marginal wafer portion with a laser beam.

10. An apparatus, comprising:
a support configured to support a wafer;
a masking device configured to cover a central wafer portion of the wafer, wherein the masking device is spaced apart from a surface of the wafer at the central wafer portion of the wafer, and wherein the masking device includes a duct configured to direct a gas into a space between the masking device and the surface of the wafer at the central wafer portion of the wafer; and
a cutting device configured to cut a marginal wafer portion of the wafer from the wafer.

11. The apparatus of claim 10 , wherein the masking device has a stiffness that is greater than a stiffness of the wafer.

12. The apparatus of claim 11 , wherein the masking device comprises a metal plate.

13. The apparatus of claim 11 , wherein the masking device is configured to have a contour that follows a circumferential contour of a step formed where the central wafer portion of the wafer abuts the marginal wafer portion of the wafer, wherein the central wafer portion of the wafer is thinner than the marginal wafer portion of the wafer.

14. The apparatus of claim 11 , wherein the masking device comprises a duct configured to direct a fluid into a space between the masking device and a surface of the wafer at the central wafer portion of the wafer.

15. The apparatus of claim 10 , wherein the cutting device comprises a laser.

Assignees

• Infineon Technologies Ag

Inventors

• Hedenig Ursula
• Ottowitz Markus
• Grille Thomas
• Koblinski Carsten Von

Classifications

• H10P76/40

  of masks comprising inorganic materials · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title