Pattern-forming method and resist underlayer film-forming composition

Patent metadata

Field	Value
Publication number	US-9607849-B2
Application number	US-201414249432-A
Country	US
Kind code	B2
Filing date	Apr 10, 2014
Priority date	Oct 12, 2011
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

First claim

What is claimed is:

1. A pattern-forming method comprising:
applying a resist underlayer film-forming composition on a substrate to provide a resist underlayer film on the substrate, the resist underlayer film-forming composition comprising a first polymer having a glass transition temperature of 0 to 180° C. and a second polymer having a glass transition temperature of more than 180° C.;
providing a silicon-based oxide film on a surface of the resist underlayer film;
providing a resist pattern on a surface of the silicon-based oxide film using a resist composition;
sequentially dry-etching the silicon-based oxide film and the resist underlayer film using the resist pattern as a mask; and
dry-etching the substrate using the dry-etched resist underlayer film as a mask,
wherein the first polymer comprises: a structural unit represented by formula (2); and a structural unit that comprises a —CH 2 OH group and an aromatic group,

wherein
R 3 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group,
R 4 is a single bond or a chain hydrocarbon group having 1 to 4 carbon atoms, and
R 5 is a phenyl group, a naphthyl group, or an anthranyl group, wherein some or all of the hydrogen atoms of the phenyl group, the naphthyl group, or the anthranyl group represented by R 5 are optionally substituted with an alkyl group,
wherein the second polymer comprises a structural unit represented by formula (5), a structural unit represented by formula (6), a structural unit represented by formula (7), a structural unit that comprises a fullerene skeleton, or a combination thereof,

wherein
R 13 and R 14 are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 14 carbon atoms, wherein some or all of the hydrogen atoms of the alkyl group, the alkoxy group, the alkoxycarbonyl group, or the aryl group represented by R 13 or R 14 are optionally substituted with an alkyl group,
R 15 is an alkyl group having 1 to 6 carbon atoms, an acyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 14 carbon atoms, wherein some or all of the hydrogen atoms of the alkyl group, the acyl group, or the aryl group represented by R 15 are optionally substituted with an alkyl group, and
n4 is 0 or 1,

wherein
R 16 is a hydroxyl group, a mercapto group, an amino group, a halogen atom, a hydrocarbon group having 1 to 20 carbon atoms, an —OR 18 group, or a —COOR 19 group,
R 18 is a hydrocarbon group having 1 to 20 carbon atoms, wherein some or all of the hydrogen atoms of the hydrocarbon group represented by R 18 are optionally substituted with a hydroxyl group or an epoxy group,
R 19 is a monovalent hydrocarbon group having 1 to 20 carbon atoms,
n5 is an integer from 0 to 6, wherein a plurality of R 16 are either identical or different when a plurality of R 16 are present, and
R 17 is a single bond, an alkanediyl group having 1 to 10 carbon atoms, an arylene group having 6 to 14 carbon atoms, or an alkylene ether group, wherein some or all of the hydrogen atoms of the alkanediyl group, the arylene group, or the alkylene ether group represented by R 17 are optionally substituted with an alkyl group,
R 18 —C≡C—R 19 —C≡C—R 20   (7)

wherein
R 18 to R 20 are each independently a single bond or a divalent organic group, wherein a case where all of R 18 to R 20 are single bonds is excluded, and
wherein an amount of the first polymer is from 10 to 40 parts by mass based on 100 parts by mass of the first polymer and the second polymer in total, and a polystyrene-reduced weight average molecular weight of the first polymer determined by gel permeation chromatography is 5000 or more.

2. The pattern-forming method according to claim 1 , wherein providing the resist underlayer film comprises:
applying the resist underlayer film-forming composition on the substrate; and
heating the resist underlayer film-forming composition at 180 to 350° C.

3. The pattern-forming method according to claim 1 , wherein providing the silicon-based oxide film comprises:
applying a silicon-based oxide film-forming composition on the surface of the resist underlayer film; and
heating the silicon-based oxide film-forming composition at 180 to 350° C.

4. The pattern-forming method according to claim 1 , wherein providing the resist underlayer film comprises:
applying the resist underlayer film-forming composition on the substrate; and
heating the resist underlayer film-forming composition at 180 to 350° C., and wherein providing the silicon-based oxide film comprises:
applying a silicon-based oxide film-forming composition on the surface of the resist underlayer film; and
heating the silicon-based oxide film-forming composition at 180 to 350° C.

5. The pattern-forming method according to claim 1 , wherein providing the resist underlayer film comprises:
applying the resist underlayer film-forming composition on the substrate; and
heating the resist underlayer film-forming composition at a temperature equal to or higher than the glass transition temperature of the first polymer, and

wherein providing the silicon-based oxide film comprises:
applying a silicon-based oxide film-forming composition on the surface of the resist underlayer film; and
heating the silicon-based oxide film-forming composition at a temperature equal to or higher than the glass transition temperature of the first polymer.

6. The pattern-forming method according to claim 1 , wherein the resist underlayer film-forming composition further comprises an acid generator.

7. The pattern-forming method according to claim 1 , wherein the first polymer further comprises a structural unit represented by formula (1), a structural unit represented by formula (4), or a combination thereof,

wherein
R 1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and
R 2 is a monovalent hydrocarbon group,

wherein
R 9 is a hydroxyl group, a mercapto group, an amino group, a halogen atom, a hydrocarbon group having 1 to 20 carbon atoms, an —OR 11 group, or a —COOR 12 group,
R 11 is a hydrocarbon group having 1 to 20 carbon atoms, wherein some or all of the hydrogen atoms of the hydrocarbon group represented by R 11 are optionally substituted with a hydroxyl group or an epoxy group,
R 12 is a hydrocarbon group having 1 to 20 carbon atoms,
R 10 is an alkanediyl group having 1 to 10 carbon atoms, an arylene group having 6 to 14 carbon atoms, or an alkylene ether group, wherein some or all of the hydrogen atoms of the alkanediyl group, the arylene group, or the alkylene ether group represented by R 10 are optionally substituted with an alkyl group,
n1 is 0 or 1, n2 is an integer from 1 to 4 when n1 is 0, and is an integer from 1 to 6 when n1 is 1, n3 is an integer from 1 to 4, wherein 1≦n2+n3≦4 is satisfied when n1 is 0, and 1≦n2+n3≦6 is satisfied when n1 is 1,
a plurality of R 9 are either identical or different when a plurality of R 9 are present, and a plurality of R 10 are either identical or different when a plurality of R 10 are

Assignees

• Jsr Corp

Inventors

• KOUMURA Kazuhiko
• Minegishi Shinya
• Mori Takashi
• Yasuda Kyoyu
• Takimoto Yoshio
• Nakafuji Shinya
• Kimura Toru

Classifications

• H10P76/40

  of masks comprising inorganic materials · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title