Cleaning apparatus and substrate processing apparatus
US-2017372893-A1 · Dec 28, 2017 · US
Cleaning after the substrates have been singulated
Cleaning after the substrates have been singulated · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P70/30 |
| Official title | {Cleaning after the substrates have been singulated} |
| Display label | Cleaning after the substrates have been singulated |
| Total patents | 278 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 27 |
| 2016 | 24 |
| 2017 | 33 |
| 2018 | 22 |
| 2019 | 30 |
| 2020 | 23 |
| 2021 | 27 |
| 2022 | 16 |
| 2023 | 29 |
| 2024 | 18 |
| 2025 | 23 |
| 2026 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Wafer processing method
US-9748182-B2 · Aug 29, 2017 · US
Bonding method of semiconductor chip and bonding apparatus of semiconductor chip
US-9728519-B2 · Aug 8, 2017 · US
Wafer processing apparatus
US-9679789-B2 · Jun 13, 2017 · US
Ultrasonic cleaning system and method
US-2017130649-A1 · May 11, 2017 · US
Device manufacturing method of processing cut portions of semiconductor substrate using carbon dioxide particles
US-9633903-B2 · Apr 25, 2017 · US
Method of fabricating a semiconductor package
US-2017098578-A1 · Apr 6, 2017 · US
Method of etching and cleaning wafers
US-9583352-B2 · Feb 28, 2017 · US
Wafer processing method
US-2017025269-A1 · Jan 26, 2017 · US
Method of reducing residual contamination in singulated semiconductor die
US-2016372323-A1 · Dec 22, 2016 · US
Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch
US-2016365283-A1 · Dec 15, 2016 · US
Wafer processing method
US-2016365270-A1 · Dec 15, 2016 · US
Apparatus and method for treating substrate
US-9508541-B2 · Nov 29, 2016 · US
Method and system for wafer level singulation
US-9502294-B2 · Nov 22, 2016 · US
Semiconductor die singulation method
US-9484210-B2 · Nov 1, 2016 · US
De-bonding and cleaning process and system
US-9475272-B2 · Oct 25, 2016 · US
Wafer processing method
US-9472442-B2 · Oct 18, 2016 · US
Method of reducing residual contamination in singulated semiconductor die
US-9472458-B2 · Oct 18, 2016 · US
Methods and apparatus for substrate edge cleaning
US-9443714-B2 · Sep 13, 2016 · US
Device manufacturing method
US-2016218037-A1 · Jul 28, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P70/30?
- CPC H10P70/30 is the Cooperative Patent Classification code for “Cleaning after the substrates have been singulated.”
- How many patents are filed under CPC H10P70/30 (Cleaning after the substrates have been singulated)?
- Our database includes 278 publications tagged with this CPC code.
- Is patent activity under CPC H10P70/30 growing?
- Publication counts under this code: 18 in 2024 vs 23 in 2025 (latest complete years).