Device manufacturing method
US-2016218037-A1 · Jul 28, 2016 · US
Device manufacturing method of processing cut portions of semiconductor substrate using carbon dioxide particles
US9633903B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9633903-B2 |
| Application number | US-201514927211-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 29, 2015 |
| Priority date | Jan 28, 2015 |
| Publication date | Apr 25, 2017 |
| Grant date | Apr 25, 2017 |
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- Title
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Abstract
Official abstract text for this publication.
A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion or the second cut portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A device manufacturing method comprising: forming a metal film on a semiconductor substrate having a first surface and a second surface, the metal film being formed on the second surface side of the semiconductor substrate; cutting the semiconductor substrate; cutting the metal film; and scraping off an intrinsic part of at least one of the semiconductor substrate and the metal film by injecting carbon dioxide particles onto at least one of a first cut portion formed by the cutting of the semiconductor substrate and a second cut portion formed by the cutting of the metal film. 2. The method according to claim 1 , wherein the semiconductor substrate and the metal film are cut along a predetermined cutting region. 3. The method according to claim 1 , wherein the intrinsic part of the at least one of the semiconductor substrate and the metal film is burr of the one of the first cut portion and the second cut portion. 4. The method according to claim 1 , wherein the carbon dioxide particles are injected in a direction tilting at a smaller angle than 90 degrees with respect to one of the first surface and the second surface. 5. The method according to claim 1 , wherein the cutting of the semiconductor substrate and the cutting of the metal film are simultaneously conducted by blade dicing from the first surface side. 6. The method according to claim 1 , wherein one of the cutting of the semiconductor substrate and the cutting of the metal film is conducted by laser irradiation. 7. The method according to claim 1 , wherein the carbon dioxide particles are injected as a spot on the semiconductor substrate or the metal film. 8. The method according to claim 7 , wherein a diameter of the spot is not smaller than 3 mm and not greater than 10 mm.
Assignees
Inventors
Classifications
Cleaning after the substrates have been singulated · CPC title
by using a laser, e.g. laser cutting or laser direct writing · CPC title
- H10P54/00Primary
Cutting or separating of wafers, substrates or parts of devices · CPC title
by edge treatment, e.g. chamfering · CPC title
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9633903B2 cover?
- A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10P54/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 25 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).