Semiconductor device
US-9818838-B2 · Nov 14, 2017 · US
the substance being nitrogen
the substance being nitrogen · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/6524 |
| Official title | {the substance being nitrogen} |
| Display label | the substance being nitrogen |
| Total patents | 214 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 21 |
| 2016 | 27 |
| 2017 | 22 |
| 2018 | 20 |
| 2019 | 14 |
| 2020 | 23 |
| 2021 | 24 |
| 2022 | 14 |
| 2023 | 17 |
| 2024 | 12 |
| 2025 | 15 |
| 2026 | 5 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
System and method for mitigating oxide growth in a gate dielectric
US-9779946-B2 · Oct 3, 2017 · US
Simultaneous formation of liner and metal conductor
US-9728399-B1 · Aug 8, 2017 · US
Simultaneous formation of liner and metal conductor
US-9721788-B1 · Aug 1, 2017 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-9698007-B2 · Jul 4, 2017 · US
System and method for mitigating oxide growth in a gate dielectric
US-2017170022-A1 · Jun 15, 2017 · US
Semiconductor device including shallow trench isolation structures
US-2017140998-A1 · May 18, 2017 · US
Composite substrate manufacturing method, and composite substrate
US-9613849-B2 · Apr 4, 2017 · US
Methods for Forming High-K Dielectric Materials with Tunable Properties
US-2017084680-A1 · Mar 23, 2017 · US
Enhancing electrical property and UV compatibility of ultrathin blok barrier film
US-9580801-B2 · Feb 28, 2017 · US
Method and apparatus for heat-treating high dielectric constant film
US-9557110-B2 · Jan 31, 2017 · US
Method of forming shallow trench isolations for a semiconductor device
US-9559017-B2 · Jan 31, 2017 · US
System and method for mitigating oxide growth in a gate dielectric
US-2016300722-A1 · Oct 13, 2016 · US
Method for fabricating semiconductor device
US-2016293724-A1 · Oct 6, 2016 · US
Pulsed plasma for film deposition
US-2016276150-A1 · Sep 22, 2016 · US
Methods for manufacturing semiconductor devices
US-9418835-B2 · Aug 16, 2016 · US
Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device
US-9412582-B2 · Aug 9, 2016 · US
Capacitor structure and method of making the same
US-2016225844-A1 · Aug 4, 2016 · US
System and method for mitigating oxide growth in a gate dielectric
US-9396951-B2 · Jul 19, 2016 · US
Method for fabricating semiconductor device
US-9396927-B2 · Jul 19, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/6524?
- CPC H10P14/6524 is the Cooperative Patent Classification code for “the substance being nitrogen.”
- How many patents are filed under CPC H10P14/6524 (the substance being nitrogen)?
- Our database includes 214 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/6524 growing?
- Publication counts under this code: 12 in 2024 vs 15 in 2025 (latest complete years).