Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9412582-B2
Application number	US-201514665781-A
Country	US
Kind code	B2
Filing date	Mar 23, 2015
Priority date	Mar 24, 2014
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.

First claim

What is claimed is:

1. A reaction tube for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein, comprising:
an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened; and
an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit and the second exhaust slit being formed in a lateral surface of the inner tube, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in an insulating region lower than the substrate arrangement region, and
wherein the second exhaust slit has an opening area smaller than that of the first exhaust slit.

2. The reaction tube of claim 1 , wherein the first exhaust slit and the second exhaust slit are spaced from each other.

3. The reaction tube of claim 1 , wherein a central opening angle of the first exhaust slit ranges from 60° to 90°.

4. The reaction tube of claim 1 , wherein the second exhaust slit has an equivalent diameter equal to or smaller than 50 mm.

5. A substrate processing apparatus, comprising:
a reaction tube, configured to constitute a process chamber in which a plurality of substrates is processed, including an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, having a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit and the second exhaust slit being formed in a lateral surface of the inner tube, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in an insulating region lower than the substrate arrangement region;
a process gas supply unit configured to supply a process gas into the reaction tube; and
a gas exhaust unit configured to exhaust the process gas from the reaction tube, and
wherein the second exhaust slit has an opening area smaller than that of the first exhaust slit.

6. The substrate processing apparatus of claim 5 , wherein the first exhaust slit and the second exhaust slit are spaced from each other.

7. The substrate processing apparatus of claim 5 , wherein a central opening angle of the first exhaust slit ranges from 60° to 90°.

8. The substrate processing apparatus of claim 5 , wherein the second exhaust slit has an equivalent diameter equal to or smaller than 50 mm.

9. The substrate processing apparatus of claim 6 , further comprising an inert gas supply unit configured to supply an inert gas toward a rotational shaft configured to rotate a substrate sustaining member for sustaining and arranging the plurality of substrates.

10. A method of manufacturing a semiconductor device, comprising:
transferring a plurality of substrates to a reaction tube for constituting a process chamber in which the plurality of substrates is processed, and including an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, having a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit and the second exhaust slit being formed in a lateral surface of the inner tube, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in an insulating region lower than the substrate arrangement region;
supplying a predetermined process gas into the reaction tube to process the plurality of substrates; and
exhausting the predetermined process gas through the first exhaust slit and the second exhaust slit, and
wherein the second exhaust slit has an opening area smaller than that of the first exhaust slit.

11. The method of claim 10 , wherein the first exhaust slit and the second exhaust slit are spaced from each other.

12. The method of claim 10 , wherein a central opening angle of the first exhaust slit ranges from 60° to 90°.

13. The method of claim 10 , wherein the second exhaust slit has an equivalent diameter equal to or smaller than 50 mm.

14. The method of claim 11 , further comprising supplying an inert gas toward a rotational shaft configured to rotate a substrate sustaining member for sustaining and arranging the plurality of substrates.

Assignees

• Hitachi Int Electric Inc

Inventors

• Sasaki Takafumi
• Morimitsu Kazuhiro
• Nishitani Eisuke
• Yamamoto Tetsuo
• Fukuda Masanao

Classifications

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6524

  the substance being nitrogen · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/69394 Primary

  the material containing titanium, e.g. TiO2 · CPC title

• C23C16/4584

  the substrate being rotated · CPC title