Semiconductor device

Patent metadata

Field	Value
Publication number	US-9818838-B2
Application number	US-201615180851-A
Country	US
Kind code	B2
Filing date	Jun 13, 2016
Priority date	Dec 21, 2012
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film. The silicon nitride film is formed in contact with a surface of the nitride semiconductor layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a silicon nitride film having a refractive index equal to or larger than 2.2 and being formed on the nitride semiconductor layer;
a gate electrode formed in an opening of the silicon nitride film and on the nitride semiconductor layer; and
a protection film being made of silicon nitride and covering a surface of the silicon nitride film and a surface of the gate electrode,
wherein a concentration of at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium in the silicon nitride film is higher than the concentration of the at least one of the elements in the protection film.

2. The semiconductor device according to claim 1 , wherein the protection film has a refractive index equal to or smaller than 2.2.

3. The semiconductor device according to claim 1 , wherein the silicon nitride film is formed on contact with a surface of the nitride semiconductor layer.

4. The semiconductor device according to claim 1 , wherein the concentration of the at least one of the elements in a region of a depth of 0 nm to less than 10 nm from a surface of the silicon nitride film is higher than the concentration of the at least one of the elements in other region in the silicon nitride film.

Assignees

• Sedi Inc

Inventors

• Komatani Tsutomu

Classifications

• H10D64/0125

  characterised by the sectional shape, e.g. T or inverted T · CPC title

• H10P95/50

  Alloying conductive materials with semiconductor bodies · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P30/40

  into insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title