Enhancing electrical property and UV compatibility of ultrathin blok barrier film

Patent metadata

Field	Value
Publication number	US-9580801-B2
Application number	US-201414535803-A
Country	US
Kind code	B2
Filing date	Nov 7, 2014
Priority date	Sep 4, 2014
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N 2 :NH 3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

First claim

The invention claimed is:

1. A method of depositing a barrier layer, comprising:
positioning a substrate in a process chamber;
activating a process gas to form a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen;
purging the activated process gas from the process chamber;
forming an RF plasma including a nitrogen-containing gas to create an activated nitrogen-containing gas;
delivering the activated nitrogen-containing gas to the barrier layer, the activated nitrogen-containing gas having a N 2 :NH 3 ratio of greater than about 1:1, wherein the nitrogen-containing gas comprises Ar, N 2 , and NH 3 ; and
purging the activated nitrogen-containing gas from the process chamber.

2. The method of claim 1 , wherein the N 2 :NH 3 ratio of the activated nitrogen-containing gas is greater than about 10:1.

3. The method of claim 1 , wherein the N 2 :NH 3 ratio of the activated nitrogen-containing gas is about 100:1.

4. The method of claim 1 , wherein the N 2 concentration of the activated nitrogen-containing gas is approximately equal to the Ar concentration of the activated nitrogen-containing gas.

5. The method of claim 1 , wherein the process gas comprises bis(diethylamino) silane (BDEAS), hexamethylcyclotrisilazane (HMCTZ), trimethylsilane (TMS) or combinations thereof.

6. The method of claim 1 , wherein the activated nitrogen-containing gas is delivered for a time period of between about 5 seconds and about 20 seconds.

7. The method of claim 1 , wherein the process gas comprises a carbon-silicon precursor with a Si:CH 3 ratio of less than about 3:1.

8. A method of depositing a barrier layer, comprising:
positioning a substrate in a process chamber;
forming a barrier layer, comprising:
delivering a process gas to the substrate;
forming a plasma including the process gas to form an activated process gas, wherein the activated process gas forms a barrier layer on a first surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen;
purging the activated process gas from the process chamber;
forming an RF plasma including a nitrogen-containing gas to create an activated nitrogen-containing gas;
delivering the activated nitrogen-containing gas to the barrier layer to form a cured barrier layer, the activated nitrogen-containing gas having a N 2 :NH 3 ratio of greater than about 1:1, wherein the resulting barrier layer is between about 5 Å and about 30 Å thick and the nitrogen-containing gas comprises Ar, N 2 , and NH 3 ; and
purging the activated nitrogen-containing gas from the process chamber; and

repeating the formation of the barrier layer one or more times to form a barrier stack.

9. The method of claim 8 , wherein the N 2 :NH 3 ratio of the activated nitrogen-containing gas is greater than about 10:1.

10. The method of claim 8 , wherein the N 2 :NH 3 ratio of the activated nitrogen-containing gas is about 100:1.

11. The method of claim 8 , wherein the N 2 concentration of the activated nitrogen-containing gas is approximately equal to the Ar concentration of the activated nitrogen-containing gas.

12. The method of claim 8 , wherein the process gas comprises bis(diethylamino) silane (BDEAS), hexamethylcyclotrisilazane (HMCTZ), trimethylsilane (TMS) or combinations thereof.

13. The method of claim 8 , wherein the activated nitrogen-containing gas is delivered for a time period of between about 5 seconds and about 20 seconds.

14. The method of claim 8 , wherein the process gas comprises a carbon-silicon precursor with a Si:CH 3 ratio of less than about 3:1.

15. A method of depositing a barrier layer, comprising:
positioning a substrate in a process chamber;
forming a barrier layer, comprising:
delivering a process gas to the substrate, the process gas comprising bis(diethylamino) silane (BDEAS), hexamethylcyclotrisilazane (HMCTZ), trimethylsilane (TMS) or combinations thereof;
forming an RF plasma including the process gas to form an activated process gas, wherein the activated process gas forms a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen;
purging the activated process gas from the process chamber using an inert gas;
forming an RF plasma including a nitrogen-containing gas to create an activated nitrogen-containing gas;
delivering the activated nitrogen-containing gas to the barrier layer to form a cured barrier layer, the activated nitrogen-containing gas having a N 2 :NH 3 ratio of greater than about 10:1, wherein the resulting barrier layer is between about 5 Å and about 30 Å thick and the nitrogen-containing gas comprises Ar, N 2 , and NH 3 ; and
purging the activated nitrogen-containing gas from the process chamber using an inert gas; and

repeating the formation of the barrier layer one or more times to form a barrier stack, the barrier stack having a thickness of at least about 40 Å.

16. The method of claim 15 , wherein the N 2 :NH 3 ratio of the activated nitrogen-containing gas is about 100:1.

17. The method of claim 15 , wherein the N 2 concentration of the activated nitrogen-containing gas is approximately equal to the Ar concentration of the activated nitrogen-containing gas.

18. The method of claim 15 , wherein the activated nitrogen-containing gas is delivered for a time period of between about 5 seconds and about 20 seconds.

19. The method of claim 1 , wherein activating the process gas to form the barrier layer on the surface of the substrate comprises forming an RF plasma including the process gas to form an activated process gas, wherein the activated process gas forms the barrier layer on the surface of the substrate.

Assignees

• Applied Materials Inc

Inventors

• Ba Xiaolan
• Ye Weifeng
• Shek Mei-Yee
• Jin Yu
• Xia Li-Qun
• Padhi Deenesh
• Demos Alexandros T

Classifications

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/075

  of multilayered thin functional dielectric layers · CPC title

• C23C16/4408 Primary

  by purging residual gases from the reaction chamber or gas lines · CPC title