Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Patent metadata

Field	Value
Publication number	US-9698007-B2
Application number	US-201514807670-A
Country	US
Kind code	B2
Filing date	Jul 23, 2015
Priority date	Sep 9, 2013
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including:
supplying a precursor gas containing silicon, carbon and a halogen element and having a chemical bonding between the silicon and the carbon, and a first catalyst gas to the substrate under non-plasma atmosphere;
supplying an oxidizing gas and a second catalyst gas to the substrate under non-plasma atmosphere; and
supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate under non-plasma atmosphere, wherein the cycle is repeated more than once.

2. The method of claim 1 , wherein the act of forming the thin film includes:
forming a first film containing silicon, oxygen and carbon on the substrate by performing a set a predetermined number of times, the set including: supplying the precursor gas and the first catalyst gas; and supplying the oxidizing gas and the second catalyst gas; and
modifying the first film into a second film further containing carbon, a second film further containing nitrogen or a second film further containing carbon and nitrogen by performing the act of supplying the modifying gas.

3. The method of claim 1 , wherein the act of supplying the precursor gas and the first catalyst gas is performed before the act of supplying the oxidizing gas and the second catalyst gas, and the act of supplying the modifying gas is performed after the act of supplying the oxidizing gas and the second catalyst gas.

4. A method of manufacturing a semiconductor device, comprising:
forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including:
supplying a precursor gas containing silicon, carbon and halogen element and having a chemical bonding between the silicon and the carbon, and a first catalyst gas to the substrate under non-plasma atmosphere;
supplying an oxidizing gas and a second catalyst gas to the substrate under non-plasma atmosphere; and
supplying a plasma-excited modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate,
wherein the cycle is repeated more than once.

5. The method of claim 1 , wherein the precursor gas contains at least one selected from the group consisting of an alkyl group and an alkylene group.

6. The method of claim 1 , wherein the precursor gas has at least one selected from the group consisting of a Si—C—Si bonding and a Si—C—C—Si bonding.

7. The method of claim 1 , wherein the modifying gas includes at least one selected from the group consisting of a hydrocarbon-based gas, an amine-based gas and a non-amine-based gas.

8. The method of claim 1 , wherein the precursor gas contains a chemical bonding between the silicon and the halogen element.

9. The method of claim 1 , wherein a temperature of the substrate in the act of supplying the modifying gas is set to be greater than a temperature of the substrate in the act of supplying the precursor gas and the first catalyst gas and the act of supplying the oxidizing gas and the second catalyst gas.

10. The method of claim 1 , wherein a temperature of the substrate in the act of supplying the modifying gas is set to be the same as a temperature of the substrate in the act of supplying the precursor gas and the first catalyst gas and the act of supplying the oxidizing gas and the second catalyst gas.

11. The method of claim 1 , wherein the precursor gas contains the carbon, the halogen element, and at least two silicon atoms in one molecule, and has a chemical bonding between the carbon and each of the at least two silicon atoms.

12. The method of claim 1 , wherein the precursor gas contains the carbon, the halogen element, and at least two silicon atoms in one molecule, and has a chemical bonding between each of the at least two silicon atoms and the carbon and a chemical bonding between each of the at least two silicon atoms and the halogen element.

13. A method of manufacturing a semiconductor device, comprising:
forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including:
supplying a precursor gas containing carbon, a halogen element and at least two silicon atoms in one molecule and having a chemical bonding between the silicon and the carbon and a chemical bonding between the silicon and the halogen element, and a first catalyst gas to the substrate under non-plasma atmosphere;
supplying an oxidizing gas and a second catalyst gas to the substrate under non-plasma atmosphere; and
supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate,
wherein the cycle is repeated more than once.

14. The method of claim 13 , wherein, in the act of supplying the modifying gas, an inert gas, which is plasma-excited, and the modifying gas, which is not plasma-excited, are mixed in a space in which the substrate exists and supplied to the substrate.

15. The method of claim 13 , wherein, in the act of supplying the modifying gas, an inert gas, which is plasma-excited, and the modifying gas, which is not plasma-excited, are mixed in a space in which the substrate exists and supplied to the substrate, and
wherein the modifying gas includes at least one selected from the group consisting of a hydrocarbon-based gas, an amine-based gas and a non-amine-based gas.

16. The method of claim 13 , wherein, in the act of supplying the modifying gas, a third catalyst and a hydrocarbon-based gas, which is not plasma-excited, are supplied to the substrate.

Assignees

• Hitachi Int Electric Inc

Inventors

• Noda Takaaki
• Shimamoto Satoshi
• Nohara Shingo
• Hirose Yoshiro
• Maeda Kiyohiko

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6529

  by exposure to a gas or vapour · CPC title

• H10P14/6526

  introduced into an oxide material, e.g. changing SiO to SiON · CPC title

• H10P14/6524

  the substance being nitrogen · CPC title