Magnetic Memory Device Based on Perpendicular Exchange Bias and Method of Manufacturing Magnetic Memory Device
US-2024032443-A1 · Jan 25, 2024 · US
Materials of the active region
Materials of the active region · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10N52/85 |
| Official title | Materials of the active region |
| Display label | Materials of the active region |
| Total patents | 112 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly growing.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 7 |
| 2017 | 8 |
| 2018 | 12 |
| 2019 | 11 |
| 2020 | 2 |
| 2021 | 6 |
| 2022 | 9 |
| 2023 | 14 |
| 2024 | 18 |
| 2025 | 13 |
| 2026 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Magnetoresistance effect element and heusler alloy
US-2022238136-A1 · Jul 28, 2022 · US
Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states
US-11355697-B2 · Jun 7, 2022 · US
Magnetic field sensor and methods of fabricating a magnetic field sensor
US-2022171001-A1 · Jun 2, 2022 · US
Magnetoresistance effect element and heusler alloy
US-11335365-B2 · May 17, 2022 · US
Hall bar device for memory and logic applications
US-2022045265-A1 · Feb 10, 2022 · US
Methods and structures for altering charge carrier density or bandgap of a topological Dirac semimetal layer
US-11239073-B2 · Feb 1, 2022 · US
Magnetic sensor and hall sensor, each using anomalous hall effect, and method for manufacturing hall sensor
US-2022026506-A1 · Jan 27, 2022 · US
Hall bar device for memory and logic applications
US-11233192-B1 · Jan 25, 2022 · US
One selector one resistor mram crosspoint memory array fabrication methods
US-2021313392-A1 · Oct 7, 2021 · US
Hall element
US-2021293905-A1 · Sep 23, 2021 · US
Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
US-11092661-B2 · Aug 17, 2021 · US
One selector one resistor MRAM crosspoint memory array fabrication methods
US-11056534-B2 · Jul 6, 2021 · US
Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states
US-2021159398-A1 · May 27, 2021 · US
Magnetoresistance effect element and heusler alloy
US-2021043226-A1 · Feb 11, 2021 · US
One selector one resistor mram crosspoint memory array fabrication methods
US-2020411589-A1 · Dec 31, 2020 · US
Charge-carrier hall-effect sensor
US-10539631-B2 · Jan 21, 2020 · US
Semiconductor device with hall elements and magnetic flux concentrator
US-10504957-B2 · Dec 10, 2019 · US
Memory element
US-10490247-B2 · Nov 26, 2019 · US
Durable miniature gas composition detector having fast response time
US-10475992-B2 · Nov 12, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10N52/85?
- CPC H10N52/85 is the Cooperative Patent Classification code for “Materials of the active region.”
- How many patents are filed under CPC H10N52/85 (Materials of the active region)?
- Our database includes 112 publications tagged with this CPC code.
- Is patent activity under CPC H10N52/85 growing?
- Publication counts under this code: 18 in 2024 vs 13 in 2025 (latest complete years).