Gas-sensitive hall device
US-2017082581-A1 · Mar 23, 2017 · US
US10475992B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10475992-B2 |
| Application number | US-201715783293-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 13, 2017 |
| Priority date | Mar 29, 2013 |
| Publication date | Nov 12, 2019 |
| Grant date | Nov 12, 2019 |
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A miniature oxygen sensor makes use of paramagnetic properties of oxygen gas to provide a fast response time, low power consumption, improved accuracy and sensitivity, and superior durability. The miniature oxygen sensor disclosed maintains a sample of ambient air within a micro-channel formed in a semiconductor substrate. O2 molecules segregate in response to an applied magnetic field, thereby establishing a measureable Hall voltage. Oxygen present in the sample of ambient air can be deduced from a change in Hall voltage with variation in the applied magnetic field. The magnetic field can be applied either by an external magnet or by a thin film magnet integrated into a gas sensing cavity within the micro-channel. A differential sensor further includes a reference element containing an unmagnetized control sample. The miniature oxygen sensor is suitable for use as a real-time air quality monitor in consumer products such as smart phones.
Opening claim text (preview).
The invention claimed is: 1. A device, comprising: a silicon substrate; a glass substrate on the silicon substrate; a gas sensor, including: a first channel in the glass substrate; a first magnet positioned on the glass substrate and adjacent to the first channel, the first magnet having a magnetic field; and a first Hall effect sensor positioned on the silicon substrate and adjacent to the first channel; and a reference element, including: a second channel in the glass substrate, the second channel being in fluidic communication with the first channel; and a second Hall effect sensor positioned on the silicon substrate and adjacent to the second channel. 2. The device of claim 1 wherein the first magnet is positioned in the first channel and spaced from the silicon substrate. 3. The device of claim 1 wherein the gas sensor includes a second magnet positioned on the silicon substrate, the first magnet being spaced from the second magnet by the silicon substrate and the glass substrate. 4. The device of claim 3 wherein the first magnet is a first magnetic pole, and the second magnet is second magnetic pole. 5. The device of claim 1 wherein the first channel and the second channel are formed between the silicon substrate and the glass substrate. 6. The device of claim 5 wherein the glass substrate includes a plurality of openings that extend through the glass substrate, and the first channel and the second channel are in fluidic communication with an external environment through the plurality of openings. 7. The device of claim 1 wherein the gas sensor includes a first plurality of contact pads electrically coupled to the first Hall effect sensor, portions of the first plurality of contact pads are positioned outside of the first channel, the reference element includes a second plurality of contact pads electrically coupled to the second Hall effect sensor, portions of the second plurality of contact pads are positioned outside of the second channel. 8. A device, comprising: a silicon substrate; a glass substrate on the silicon substrate; a channel in the glass substrate; a first Hall effect sensor in the silicon substrate; an integrated fixed magnet positioned on the glass substrate, in the channel, and adjacent to the first Hall effect sensor; and a second Hall effect sensor in the silicon substrate, the channel extending from the first Hall effect sensor to the second Hall effect sensor. 9. The device of claim 8 wherein the glass substrate includes a plurality of openings, and the channel is in fluidic communication with an environment external to the channel through the plurality of openings. 10. The device of claim 8 , further comprising: a plurality of contact pads electrically coupled to the first Hall effect sensor and the second Hall effect sensor, portions of the plurality of contact pads being positioned outside of the channel. 11. The device of claim 8 wherein the magnet is configured to apply a magnetic field in the channel. 12. A device, comprising: a silicon substrate; a glass substrate on the silicon substrate; a channel in the glass substrate, the channel having a first side and a second side opposite to the first side; a first Hall effect sensor in the silicon substrate and adjacent to the first side of the channel; first and second magnets having a magnetic field through the first side of the channel, the first magnet being spaced from the second magnet by the silicon substrate and the glass substrate; and a second Hall effect sensor in the silicon substrate and adjacent to the second side of the channel. 13. The device of claim 12 wherein the glass substrate includes a plurality of openings, the channel being in fluidic communication with an environment external to the channel through the plurality of openings. 14. The device of claim 12 , further comprising: a first plurality of contact pads electrically coupled to the first Hall effect sensor, portions of the first plurality of contact pads being positioned outside of the channel; and a second plurality of contact pads electrically coupled to the second Hall effect sensor, portions of the second plurality of contact pads being positioned outside of the channel. 15. The device of claim 12 wherein the first magnet is a first magnetic pole, and the second magnet is a second magnetic pole. 16. The device of claim 1 wherein a portion of the first Hall effect sensor is aligned with the first channel and the first magnet.
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