Charge-carrier hall-effect sensor

Patent metadata

Field	Value
Publication number	US-10539631-B2
Application number	US-201615751130-A
Country	US
Kind code	B2
Filing date	Jul 19, 2016
Priority date	Aug 12, 2015
Publication date	Jan 21, 2020
Grant date	Jan 21, 2020

Abstract

A charge-carrier Hall-effect sensor comprising: a semiconductor or a semimetal layer; a pair of electric current contacts in electrical contact with the semiconductor or semimetal layer and separated in a first longitudinal direction along a first electric current channel; a pair of voltage contacts in electrical contact with the semiconductor or semimetal layer and separated in a second transverse direction, orthogonal to the first direction, and positioned on either side of the electric current channel; an electrically insulating layer underlying the semiconductor or the semimetal layer; and a ferromagnetic layer underlying the electrically insulating layer comprising at least one region having a magnetic moment with a component perpendicular to a plane comprising the pair of electric current contacts and the pair of voltage contacts.

First claim

I claim:

1. A charge-carrier Hall-effect sensor comprising:
a semiconductor or a semimetal layer;
a pair of electric current contacts in electrical contact with the semiconductor or semimetal layer and separated in a first direction along a first electric current channel;
at least a pair of voltage contacts in electrical contact with the semiconductor or semimetal layer and separated in a second direction, orthogonal to the first direction, and positioned on either side of the first electric current channel;
an electrically insulating layer underlying the semiconductor or the semimetal layer; and
a ferromagnetic layer underlying the electrically insulating layer comprising at least one region having a magnetic moment with a component perpendicular to a plane comprising the pair of electric current contacts and the voltage contacts.

2. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the semiconductor or semimetal comprises graphene.

3. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the semiconductor or semimetal layer is:
is a flat, planar substantially two-dimensional layer comprising no more than three atomic layers; and/or
is a monolayer; and/or
consists of graphene or functionalized graphene.

4. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the semiconductor or semimetal layer is exposed to an atmosphere directly or via a selective structure for detection of an analyte in the atmosphere.

5. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the electrically insulating layer comprises hexagonal boron nitride.

6. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the ferromagnetic layer is a perpendicular magnetic isotropic film.

7. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the ferromagnetic layer has a thickness at least 300 times greater than the combined thickness of the semiconductor or semimetal layer and the electrically insulating layer and/or wherein the magnetic moment of the ferromagnetic layer provides a magnetic field of at least 0.1T.

8. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the ferromagnetic layer provides a spatially varying magnetic moment, that varies in the transverse direction and/or the longitudinal direction and/or wherein the ferromagnetic layer comprises first regions that are magnetized in a first direction, and second regions between the first regions that are magnetized in a second direction, opposite the first direction.

9. A charge-carrier Hall-effect sensor as claimed in claim 1 , wherein the ferromagnetic layer has a high-magnetic coercivity that is temperature dependent, wherein the ferromagnetic layer is a thermo-magnetically patterned thermo-magnetic layer comprising spatially varying magnetic domains in the transverse and longitudinal directions.

10. A charge-carrier Hall-effect sensor as claimed in claim 1 , further comprising first electrical circuitry configured to provide a constant electric current between the pair of electric current contacts and second electric circuitry configured to measure a voltage change between the pair of voltage contacts, wherein the vector cross product of the electric current provided by the first electrical circuitry and the magnetic field provided by the magnetic moment of the ferromagnetic layer is sufficient to produce a change in voltage that is measurable by the second electric circuitry, when a charge-carrier density of the semiconductor or semimetal layer changes by a single charge-carrier.

11. A charge-carrier Hall-effect sensor as claimed in claim 1 , mounted on a flexible substrate to provide a flexible charge-carrier Hall-effect sensor.

12. A method of manufacturing a charge-carrier Hall-effect sensor comprising:
selectively controlling magnetization of second regions of a ferromagnetic layer to provide, as magnetic islands, first regions of the ferromagnetic layer each magnetized in a first direction perpendicular to a plane occupied by the ferromagnetic layer;
providing an electrically insulating layer over the ferromagnetic layer;
providing a semiconductor or semimetal layer over the electrically insulating layer; and
patterning the semiconductor or semimetal layer to form a Hall-effect sensor overlying the first regions of the ferromagnetic layer, wherein the Hall-effect sensor comprises a pair of electric current contacts in contact with the semiconductor or semimetal layer and separated in a first longitudinal direction along a first electric current channel and a pair of voltage contacts in electrical contact with the semiconductor or semimetal layer and separated in a second transverse direction, orthogonal to the first longitudinal direction and positioned on either side of the electric current channel.

13. A method as claimed in claim 12 , where in the semiconductor or semimetal comprises graphene.

14. A method as claimed in claim 12 , further comprising thermo-magnetic patterning of the ferromagnetic layer to create the second regions of the ferromagnetic layer, wherein the second regions of the ferromagnetic layer are magnetized in a second direction opposite the first direction.

15. A method as claimed in claim 12 , comprising maintaining a perpendicular magnetic anisotropy film at a first temperature while selectively heating the second regions of the perpendicular magnetic anisotropy film to form the second regions of the ferromagnetic layer while not heating first regions of the perpendicular magnetic anisotropy film to form first regions of the ferromagnetic layer, wherein the selective heating of the perpendicular magnetic anisotropy film causes localised degaussing.

16. A method as claimed in claim 15 wherein the selective heating is performed using lasers with an optical resolution in the order of one μm.

17. A method of detecting a single addition or subtraction to a population of charge-carriers in a charge-carrier Hall-effect sensor comprising:
a semiconductor or a semimetal layer;
a pair of electric current contacts in electrical contact with the semiconductor or semimetal layer and separated in a first longitudinal direction along a first electric current channel;
at least a pair of voltage contacts in electrical contact with the semiconductor or semimetal layer and separated in a second transverse direction, orthogonal to the first direction, and positioned on either side of the electric current channel;
an electrically insulating layer underlying the semiconductor or the semimetal layer; and
a ferromagnetic layer underlying the electrically insulating layer comprising at least one region having a magnetic moment with a component perpendicular to a plane comprising the pair of electric current contacts and the pair of voltage contacts, the method comprising:
providing a constant electric current between the pair of electric current contacts while measuring variations in the voltage between the pair of voltage contacts.

18. A method as claimed in claim 17 , wherein the semiconductor or semimetal comprises graphene.

Assignees

• Nokia Technologies Oy

Inventors

• Bruna Matteo

Classifications

• G01R33/09

  Magnetoresistive devices · CPC title

• G01R33/1284

  Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices · CPC title

• G01R33/07 Primary

  Hall effect devices · CPC title

• G01R15/202

  using Hall-effect devices (Hall elements in arrangements for measuring electrical power G01R21/08) · CPC title

• G01R33/06

  using galvano-magnetic devices · CPC title