Hall bar device for memory and logic applications

Patent metadata

Field	Value
Publication number	US-11233192-B1
Application number	US-202016988085-A
Country	US
Kind code	B1
Filing date	Aug 7, 2020
Priority date	Aug 7, 2020
Publication date	Jan 25, 2022
Grant date	Jan 25, 2022

Abstract

A hall bar device for a memory or logic application can include a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer. For a memory application, the hall bar device can be written to by applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and can be read from by measuring a voltage across the one leg of the hall bar structure and its opposite leg.

First claim

What is claimed is:

1. A hall bar device for memory and logic applications, comprising:
a gate electrode;
a boron-doped chromia layer on the gate electrode; and
a hall bar structure with four legs on the boron-doped chromia layer,
wherein a ferromagnetic state of the boron-doped chromia layer is controlled by a voltage applied across the gate electrode and one leg of the hall bar structure and is read out by a voltage across the one leg of the hall bar structure and its opposite leg while a read-out current is applied at one of the legs orthogonal to the one leg and its opposite leg to generate an in-plane current density.

2. The hall bar device of claim 1 , wherein:
the hall bar structure comprises platinum.

3. The hall bar device of claim 1 , wherein:
the gate electrode comprises Vanadium(III) oxide.

4. A memory device, comprising:
an array of hall bar devices, each hall bar device comprising:
a gate electrode;
a boron-doped chromia layer on the gate electrode; and
a hall bar structure with four legs on the boron-doped chromia layer,
wherein a ferromagnetic state of the boron-doped chromia layer is controlled by a voltage applied across the gate electrode and one leg of the hall bar structure and is read out by a voltage across the one leg of the hall bar structure and its opposite leg while a read-out current is applied at one of the legs orthogonal to the one leg and its opposite leg to generate an in-plane current density.

5. The memory device of claim 4 , wherein:
the hall bar structure of each hall bar device comprises platinum.

6. The memory device of claim 4 , wherein:
the gate electrode of each hall bar device comprises Vanadium(III) oxide.

7. The memory device of claim 4 , further comprising at least one complementary metal oxide semiconductor (CMOS) device coupled to the array of hall bar devices.

8. A method of operating a hall bar device for a memory application, wherein the hall bar device comprises a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer, the method comprising:
writing to the hall bar device, the writing comprising applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and
reading from the hall bar device, the reading comprising measuring a voltage across the one leg of the hall bar structure and its opposite leg.

9. The method of claim 8 , wherein the method is performed at a temperature of 300 K-400 K.

10. The method of claim 8 , wherein:
the hall bar structure comprises platinum.

11. The method of claim 8 , wherein:
the gate electrode comprises Vanadium(III) oxide.

Assignees

• Univ Nebraska

Inventors

• Binek Christian
• Mahmood Ather
• Echtenkamp William

Classifications

• H01F10/002

  Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature (H01F10/3218 and H01F10/3268 take precedence) · CPC title

• H10N52/85

  Materials of the active region · CPC title

• G11C11/18 Primary

  using Hall-effect devices · CPC title

• H01F1/0009

  Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature (H01F1/0036 takes precedence) · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title