Methods and structures for altering charge carrier density or bandgap of a topological Dirac semimetal layer

Patent metadata

Field	Value
Publication number	US-11239073-B2
Application number	US-201816177286-A
Country	US
Kind code	B2
Filing date	Oct 31, 2018
Priority date	May 2, 2016
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

Dirac semimetals, methods for modulating charge carrying density and/or band gap in a Dirac semimetal, devices including a Dirac semimetal layer, and methods for forming a Dirac semimetal layer on a substrate are described.

First claim

What is claimed is:

1. A method of altering a charge carrier density in a topological Dirac semimetal, the method comprising:
providing a structure including:
a conductor,
an insulating layer,
a topological Dirac semimetal layer separated from the conductor by at least the insulating layer,

at least one electrode contacting the topological Dirac semimetal layer; and
applying a voltage to the conductor relative to the at least one electrode to subject at least a portion of the topological Dirac semimetal layer to an electric field to alter the charge carrier density of the topological Dirac semimetal layer;
wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.

2. The method of claim 1 , wherein the method includes switching the voltage between a first voltage and a second voltage to increase or decrease the charge carrier density in the topological Dirac semimetal layer.

3. The method of claim 1 , wherein the topological Dirac semimetal layer is formed from a material of the form A 3 Bi, where A is an alkali metal.

4. The method of claim 3 , wherein a thickness of the topological Dirac semimetal layer is at least 15 nm.

5. The method of claim 3 , wherein the alkali metal is Na.

6. The method of claim 1 , wherein:
the at least one electrode is a first electrode, and
wherein the method further includes:
providing a second electrode in contact with the topological Dirac semimetal layer, the first and second electrodes being spaced apart from each other and between which current may flow from a current or voltage source through the topological Dirac semimetal layer;
wherein when current is passing between the first and second electrodes, the step of subjecting the topological Dirac semimetal to an electric field alters a magnitude and/or a direction of the current passing between the at least two electrodes.

7. The method of claim 1 , wherein the method further includes providing a layer for donating or accepting charge carriers from the topological Dirac semimetal layer.

8. The method of claim 1 , wherein the method further include providing a capping layer for preventing oxidation of the topological Dirac semimetal layer.

9. A method of altering a band gap of a topological Dirac semimetal, the method comprising:
providing a structure including:
a conductor,
an insulating layer,
a topological Dirac semimetal layer separated from the conductor by at least the insulating layer,
at least one electrode contacting the topological Dirac semimetal layer; and

applying a voltage to the conductor relative to the at least one electrode to subject at least a portion of the topological Dirac semimetal layer to an electric field to alter the band gap of the topological Dirac semimetal layer;
wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.

10. The method of claim 9 , wherein the method further includes varying a strength of the electric field to vary the band gap.

11. The method of claim 9 , wherein the topological Dirac semimetal layer is formed from a material of the form A 3 Bi, where A is an alkali metal.

12. The method of claim 9 , wherein the topological Dirac semimetal layer is an ultrathin film and has a thickness of 2 unit cells or less.

13. A structure for altering a charge carrier density in a topological Dirac semimetal, the structure comprising:
a conductor,
an insulating layer;
a topological Dirac semimetal layer separated from the conductor by at least the insulating layer, and
at least one electrode contacting the topological Dirac semimetal layer,
wherein the conductor and the at least one electrode are configured to apply an electric field to at least a portion of the topological Dirac semimetal layer to alter the charge carrier density of the topological Dirac semimetal layer;
wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.

14. The structure of claim 13 , wherein the topological Dirac semimetal layer is formed from a material of the form A 3 Bi, where A is an alkali metal.

15. The structure of claim 14 , wherein a thickness of the topological Dirac semimetal layer is at least 15 nm.

16. A structure for altering a band gap of a topological Dirac semimetal, the structure comprising:
a conductor,
an insulating layer;
a topological Dirac semimetal layer separated from the conductor by at least the insulating layer, and
wherein the conductor is configured to apply an electric field to at least a portion of the topological Dirac semimetal layer to alter the band gap of the topological Dirac semimetal layer;
wherein topological Dirac semimetals are Dirac semimetal materials that exhibit linear electronic dispersions in three dimensions.

17. The structure of claim 16 , wherein the topological Dirac semimetal layer is formed from a material of the form A 3 Bi, where A is an alkali metal.

18. The structure of claim 17 , wherein the alkali metal is Na.

19. The structure of claim 17 , wherein a thickness of the topological Dirac semimetal layer is at least 15 nm.

20. The structure of claim 16 , wherein the topological Dirac semimetal layer is an ultrathin film and has a thickness of 2 unit cells or less.

21. The structure of claim 16 , the structure further comprising:
a conductive electrode in contact with the topological Dirac semimetal layer, the conductive electrode and the conductor spaced apart from each other and between which current may flow from a current or voltage source through the topological Dirac semimetal layer; and
wherein at least one of the conductor or the conductive electrode is configured to be connected to the current or voltage source.

22. The structure of claim 16 , the structure further comprising:
a layer for donating or accepting charge carriers from the topological Dirac semimetal layer.

23. The structure of claim 22 , wherein the layer for donating or accepting charge carriers from the topological Dirac semimetal layer is an electron accepting layer.

24. The structure of claim 16 , wherein the structure further comprises a capping layer for preventing oxidation of the topological Dirac semimetal layer.

Assignees

• Univ Monash

Inventors

• Fuhrer Michael Sears
• Hellerstedt John Thery
• Edmonds Mark Thomas
• Collins James Lee Richard Jessee
• Liu Chang

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title