Memory element

Patent metadata

Field	Value
Publication number	US-10490247-B2
Application number	US-201615743149-A
Country	US
Kind code	B2
Filing date	Jul 25, 2016
Priority date	Jul 24, 2015
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

A memory element includes a free magnetization layer (“FR-ML”) in a film form, a nonmagnetic layer (“NML”), and a fixed magnetization layer (“FX-ML”), The NML and FX-ML are stacked on the FR-ML. The FR ML stores a single bit of data “0” or “1” according to a magnetization direction and rewrites the data by reversing the magnetization direction. An antiferromagnet that exhibits the anomalous Hall effect and has a reversible magnetization direction is used for the FR-M. The reversal of the magnetization direction of the FR-ML is performed using the FX-ML by the spin-transfer torque technique. To read data, a reading current is caused to flow in one direction, and a Hall voltage generated in the FR-ML by the anomalous Hall effect is extracted from the FR-ML. The polarity of the Hall voltage is reversed in accordance with the magnetization direction of the FR-ML.

First claim

The invention claimed is:

1. A memory element comprising:
a free magnetization layer made of an antiferromagnet having a reversible magnetization direction;
a magnetization reversing unit configured to reverse a magnetization direction of the free magnetization layer depending on data to be written; and
a reading unit configured to extract an electric signal in accordance with the magnetization direction of the free magnetization layer in data reading;
wherein the free magnetization layer is made of an antiferromagnet that exhibits an anomalous Hall effect, and the reading unit includes:
a reading electrode portion configured to cause a reading current to flow in one direction along an in-plane direction of the free magnetization layer in data reading; and
an outputting electrode portion configured to extract a Hall voltage generated by the anomalous Hall effect appearing in the antiferromagnet of the free magnetization layer caused by the reading current flowing through the free magnetization layer.

2. The memory element according to claim 1 , wherein the free magnetization layer is made of a noncollinear antiferromagnet.

3. The memory element according to claim 2 , wherein the noncollinear antiferromagnet is one of antiferromagnets including Mn 3 Sn, Mn 3 Ge, and Mn 3 Ga.

4. The memory element according to claim 2 , wherein the noncollinear antiferromagnet is one of a crystallographically cubic or tetragonal compound of Mn and Ni and a crystallographically cubic alloy containing γ-phase Mn or Fe.

5. The memory element according to claim 1 , wherein
the magnetization reversing unit includes:
a nonmagnetic layer stacked on a film surface of the free magnetization layer; and
a fixed magnetization layer having a fixed magnetization direction,
the nonmagnetic layer is disposed between the free magnetization layer and the fixed magnetization layer, and
a direction of a writing current that flows between the free magnetization layer and the fixed magnetization layer is changed depending on data to be written, and a magnetization direction of the antiferromagnet of the free magnetization layer is reversed in accordance with the direction of the writing current.

6. The memory element according to claim 1 , wherein
the magnetization reversing unit includes
a nonmagnetic layer stacked on a film surface of the free magnetization layer, and
by changing a direction of a writing current that flows through the nonmagnetic layer in a direction parallel to the film surface of the free magnetization layer depending on data to be written, a direction of a spin of an electron that is caused to flow into the free magnetization layer is changed by a spin current generated in the nonmagnetic layer, and then a magnetization direction of the antiferromagnet of the free magnetization layer is reversed in accordance with the direction of the spin of the electron.

7. The memory element according to claim 1 , wherein
the magnetization reversing unit includes:
a nonmagnetic layer stacked on a film surface of the free magnetization layer; and
a fixed magnetization layer that has a fixed magnetization direction and that exhibits the anomalous Hall effect,
the nonmagnetic layer is disposed between the free magnetization layer and the fixed magnetization layer, and
by changing a direction of a writing current that flows through the fixed magnetization layer in a direction parallel to the film surface of the free magnetization layer depending on data to be written, a direction of a spin of an electron that exerts a torque on magnetization of the antiferromagnet of the free magnetization layer is changed by a spin polarization current generated in the fixed magnetization layer, and then a magnetization direction of the antiferromagnet of the free magnetization layer is reversed in accordance with the direction of the spin of the electron.

8. The memory element according to claim 1 , wherein
the magnetization reversing unit includes a word line and a bit line,
an electric current is caused to flow in one direction through the word line, and a direction of an electric current is changed depending on data to be written in the bit line, and
the free magnetization layer is disposed at an intersection of the word line and the bit line, and a magnetization direction of the antiferromagnet is reversed in accordance with the direction of the electric current flowing through the bit line.

9. The memory element according to claim 1 , comprising:
a nonmagnetic layer stacked on a film surface of the free magnetization layer; and
a fixed magnetization layer having a fixed magnetization direction, wherein
the nonmagnetic layer is disposed between the free magnetization layer and the fixed magnetization layer, and
an electric current in accordance with the magnetization direction of the free magnetization layer with respect to a magnetization direction of the fixed magnetization layer is caused to flow through the reading unit by application of a predetermined voltage to the fixed magnetization layer, the nonmagnetic layer, and the free magnetization layer.

10. The memory element according to claim 1 , comprising:
a nonmagnetic layer stacked on a film surface of the free magnetization layer; and
a fixed magnetization layer having a fixed magnetization direction, wherein
the nonmagnetic layer is disposed between the free magnetization layer and the fixed magnetization layer, and
a potential difference in accordance with the magnetization direction of the free magnetization layer with respect to a magnetization direction of the fixed magnetization layer occurs in the reading unit by causing a predetermined current to flow through the fixed magnetization layer, the nonmagnetic layer, and the free magnetization layer.

Assignees

• Univ Tokyo

Inventors

• Nakatsuji Satoru

Classifications

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• G11C11/18

  using Hall-effect devices · CPC title