Semiconductor device including memory cell including thyristor and method of manufacturing the same
US-2024276741-A1 · Aug 15, 2024 · US
characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence)
characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D84/60 |
| Official title | characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence) |
| Display label | characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence) |
| Total patents | 180 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 13 |
| 2016 | 16 |
| 2017 | 21 |
| 2018 | 24 |
| 2019 | 13 |
| 2020 | 18 |
| 2021 | 20 |
| 2022 | 14 |
| 2023 | 11 |
| 2024 | 14 |
| 2025 | 11 |
| 2026 | 5 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Electrostatic discharge devices
US-2018366460-A1 · Dec 20, 2018 · US
TVS structures for high surge and low capacitance
US-10096588-B2 · Oct 9, 2018 · US
Radio Frequency Resistor Element
US-2018286941-A1 · Oct 4, 2018 · US
Compound semiconductor transistor and high-Q passive device single chip integration
US-10062683-B1 · Aug 28, 2018 · US
Thyristor assembly radiator for dc converter valve
US-2018218965-A1 · Aug 2, 2018 · US
Semiconductor device and transistor cell having a diode region
US-10038087-B2 · Jul 31, 2018 · US
Semiconductor Device and Transistor Cell Having a Diode Region
US-2018122931-A1 · May 3, 2018 · US
Thyristor random access memory device and method
US-9954075-B2 · Apr 24, 2018 · US
Method for manufacturing an electronic device and electronic device
US-2018096984-A1 · Apr 5, 2018 · US
Esd protection circuit, differential transmission line, common mode filter circuit, esd protection device, and composite device
US-2017373492-A1 · Dec 28, 2017 · US
Facilitation of increased locking range transistors
US-9847784-B2 · Dec 19, 2017 · US
Dual-sided silicon integrated passive devices
US-2017323883-A1 · Nov 9, 2017 · US
TVS structures for high surge and low capacitance
US-9793254-B2 · Oct 17, 2017 · US
Dual-sided silicon integrated passive devices
US-9748227-B2 · Aug 29, 2017 · US
Heterojunction bipolar transistor
US-2017243939-A1 · Aug 24, 2017 · US
Magnetic multilayer structure
US-2017200766-A1 · Jul 13, 2017 · US
Adjustable Multi-Turn Magnetic Coupling Device
US-2017179216-A1 · Jun 22, 2017 · US
Efficient fabrication of BiCMOS devices
US-9673191-B2 · Jun 6, 2017 · US
Facilitation of increased locking range transistors
US-2017149438-A1 · May 25, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D84/60?
- CPC H10D84/60 is the Cooperative Patent Classification code for “characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence).”
- How many patents are filed under CPC H10D84/60 (characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence))?
- Our database includes 180 publications tagged with this CPC code.
- Is patent activity under CPC H10D84/60 growing?
- Publication counts under this code: 14 in 2024 vs 11 in 2025 (latest complete years).