Stacked independently contacted field effect transistor having electrically separated first and second gates
US-10164121-B2 · Dec 25, 2018 · US
Channel regions of field-effect devices
Channel regions of field-effect devices · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/213 |
| Official title | {Channel regions of field-effect devices} |
| Display label | Channel regions of field-effect devices |
| Total patents | 291 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 9 |
| 2016 | 12 |
| 2017 | 19 |
| 2018 | 35 |
| 2019 | 41 |
| 2020 | 48 |
| 2021 | 34 |
| 2022 | 26 |
| 2023 | 26 |
| 2024 | 14 |
| 2025 | 24 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of fabricating vertical transistor device
US-2018342524-A1 · Nov 29, 2018 · US
Tunnel field effect transistor having anisotropic effective mass channel
US-10141436-B2 · Nov 27, 2018 · US
Semiconductor device having channel regions
US-10128379-B2 · Nov 13, 2018 · US
Non-volatile memory device
US-10128267-B2 · Nov 13, 2018 · US
Integrated circuit devices
US-2018269333-A1 · Sep 20, 2018 · US
Tunnel field effect transistor having anisotropic effective mass channel
US-2018254335-A1 · Sep 6, 2018 · US
Tunnel finfet with self-aligned gate
US-2018254340-A1 · Sep 6, 2018 · US
Semiconductor device having channel regions
US-2018190829-A1 · Jul 5, 2018 · US
Semiconductor Device with an IGBT Region and a Non-Switchable Diode Region
US-2018190649-A1 · Jul 5, 2018 · US
Semiconductor device and method of manufacturing the same
US-10014058-B2 · Jul 3, 2018 · US
Semiconductor device and method of manufacturing the same
US-2018166541-A1 · Jun 14, 2018 · US
Integrated circuit devices and method of manufacturing the same
US-9978881-B2 · May 22, 2018 · US
Tunnel finfet with self-aligned gate
US-2018138307-A1 · May 17, 2018 · US
Thin film transistor, manufacturing method thereof, and display device having the same
US-2018130827-A1 · May 10, 2018 · US
Semiconductor device and method for fabricating the same
US-2018130905-A1 · May 10, 2018 · US
Semiconductor devices
US-2018130713-A1 · May 10, 2018 · US
Static random access memory (SRAM) device for improving electrical characteristics and logic device including the same
US-9935204-B2 · Apr 3, 2018 · US
Integrated circuit devices and method of manufacturing the same
US-2018040740-A1 · Feb 8, 2018 · US
Electronic device and methods of fabricating the same
US-2018019347-A1 · Jan 18, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/213?
- CPC H10D62/213 is the Cooperative Patent Classification code for “Channel regions of field-effect devices.”
- How many patents are filed under CPC H10D62/213 (Channel regions of field-effect devices)?
- Our database includes 291 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/213 growing?
- Publication counts under this code: 14 in 2024 vs 24 in 2025 (latest complete years).