Semiconductor device having channel regions

Patent metadata

Field	Value
Publication number	US-2018190829-A1
Application number	US-201715647903-A
Country	US
Kind code	A1
Filing date	Jul 12, 2017
Priority date	Jan 4, 2017
Publication date	Jul 5, 2018
Grant date	—

Abstract

A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.

First claim

1 . A semiconductor device comprising:
a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.

2 . The semiconductor device of claim 1 , further comprising inner spacers provided on the sides of the gate electrodes, and between the nanowires, and between a lowermost nanowire among the nanowires and the substrate.

3 . The semiconductor device of claim 2 , wherein, in a cross section taken in a first direction in which the protruding portions are extended, the first voids are sealed by the source/drain regions, the protruding portions, and lowermost inner spacers of the inner spacers.

4 . The semiconductor device of claim 2 , wherein one side surface of each of the inner spacers has a convex shape toward the gate electrodes.

5 . The semiconductor device of claim 2 , further comprising an insulating layer provided between the protruding portions and the first voids.

6 . The semiconductor device of claim 5 , wherein the insulating layer is in contact with a lowermost inner spacer of the inner spacers.

7 . The semiconductor device of claim 1 , wherein a lower surface of each of the source/drain regions is lower than a lowermost nanowire of the nanowires.

8 . The semiconductor device of claim 1 , further comprising:
an isolation insulating layer provided on the substrate and covering a portion of a side surface of each of the protruding portions; and fin spacers provided on the isolation insulating layer and in contact with side surfaces of the protruding portions.

9 . The semiconductor device of claim 8 , wherein an upper end of each of the fin spacers is higher than an upper surface of a lowermost nanowire among the nanowires, and is lower than a lower surface of a neighboring nanowire adjacent to the lowermost nanowire.

10 . The semiconductor device of claim 8 , wherein an upper end of each of the fin spacers is higher than an upper surface of each of the protruding portions.

11 . The semiconductor device of claim 8 , wherein, in a cross section taken in a direction in which the gate electrodes are extended, each of the first voids is sealed by each of the source/drain regions, the fin spacers, and the protruding portions.

12 . The semiconductor device of claim 8 , wherein each of the source/drain regions includes a first portion provided between the fin spacers and having a first width, and a second portion provided on the first portion and having a second width that is wider than the first width of the second portion.

13 - 15 . (canceled)

16 . The semiconductor device of claim 1 , further comprising an insulating layer provided between the protruding portions and the first voids.

17 . A semiconductor device comprising:
a substrate; protruding portions extending in parallel to each other on the substrate; an isolation insulating layer provided on the substrate and covering a portion of side surfaces of the protruding portions; fin spacers provided on the isolation insulating layer and in contact with the side surfaces of the protruding portions; first channel regions provided on the protruding portions, the first channel regions being separated from each other and extended in a first direction; second channel regions provided above the first channel regions and extended in the first direction; gate electrodes extended in a second direction intersecting the first direction and surrounding the first channel regions and the second channel regions; inner spacers provided on sides of the gate electrodes, and between the first channel regions and the protruding portions; source/drain regions provided on the sides of the gate electrodes and connected to the first channel regions and the second channel regions; and first voids provided below the source/drain regions.

18 . The semiconductor device of claim 17 , further comprising an insulating layer provided between the first voids and the substrate,
wherein the insulating layer is in contact with the inner spacers, and covers the protruding portions and the fin spacers.

19 . The semiconductor device of claim 18 , wherein, in a cross section taken in a direction in which the protruding portions are extended, the first voids are sealed by the source/drain regions, the insulating layer, and the inner spacers.

20 . The semiconductor device of claim 17 , further comprising an interlayer insulating layer covering the isolation insulating layer and the source/drain regions.

21 . The semiconductor device of claim 20 , wherein, in a cross section taken in a direction in which the gate electrodes are extended, the first voids are sealed by the source/drain regions, the insulating layer, the fin spacers, and the interlayer insulating layer.

22 . The semiconductor device of claim 21 , wherein the first voids are integrally provided on neighboring protruding portions of the protruding portions.

23 - 24 . (canceled)

25 . A semiconductor device comprising:
a substrate; source/drain regions extended in a direction perpendicular to an upper surface of the substrate; nanowires providing a channel region extended in a first direction between the source/drain regions and separated from each other; a gate electrode surrounding the nanowires and extended in a second direction intersecting the first direction; a gate insulating film provided between the nanowires and the gate electrode; and voids between the source/drain regions and the substrate, wherein an upper boundary of the voids is lower than a lower surface of a lowermost nanowire among the nanowires.

26 - 30 . (canceled)

Assignees

• Samsung Electronics Co Ltd

Inventors

• Song Seung Min
• Park Woo Seok
• Bae Geum Jong
• Bae Dong Il
• Yang Jung Gil

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H01L29/66545

  Electricity · mapped topic

• H01L29/0673

  Electricity · mapped topic

• H01L29/78618 Primary

  Electricity · mapped topic