Scalable voltage source
US-10872887-B2 · Dec 22, 2020 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/88 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 105 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 11 |
| 2016 | 12 |
| 2017 | 14 |
| 2018 | 10 |
| 2019 | 10 |
| 2020 | 13 |
| 2021 | 16 |
| 2022 | 8 |
| 2023 | 7 |
| 2024 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Integrated mim diode
US-2020168747-A1 · May 28, 2020 · US
Logic-embedded diode/tunnel diode coupled to floating gate with i-v characteristics suitable for logic state retention
US-2020105743-A1 · Apr 2, 2020 · US
P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers
US-10497817-B1 · Dec 3, 2019 · US
Method for processing a semiconductor workpiece and semiconductor device
US-10403725-B2 · Sep 3, 2019 · US
Semiconductor devices with back surface isolation
US-2019252238-A1 · Aug 15, 2019 · US
Manufacturing method for semiconductor laminated film, and semiconductor laminated film
US-2019242008-A1 · Aug 8, 2019 · US
Tunnel field effect transistors
US-10374068-B2 · Aug 6, 2019 · US
Methods for using remote plasma chemical vapor deposition (rp-cvd) and sputtering deposition to grow layers in light emitting devices
US-2019189436-A1 · Jun 20, 2019 · US
Highly doped layer for tunnel junctions in solar cells
US-10326042-B2 · Jun 18, 2019 · US
Semiconductor devices with back surface isolation
US-10312131-B2 · Jun 4, 2019 · US
Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices
US-10236409-B2 · Mar 19, 2019 · US
Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
US-10236365-B2 · Mar 19, 2019 · US
Optoelectronic device and method for manufacturing same
US-10141370-B2 · Nov 27, 2018 · US
Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
US-10128357-B2 · Nov 13, 2018 · US
P-tunneling field effect transistor device with pocket
US-10128356-B2 · Nov 13, 2018 · US
Group iiia-n hemt with a tunnel diode in the gate stack
US-2018323297-A1 · Nov 8, 2018 · US
Method of forming a semiconductor device and method therefor
US-2018240791-A1 · Aug 23, 2018 · US
Stacked optocoupler component
US-10050169-B2 · Aug 14, 2018 · US
Semiconductor device including two-dimensional material
US-9991371-B2 · Jun 5, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/88?
- CPC H01L29/88 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/88 (Electricity)?
- Our database includes 105 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/88 growing?
- Publication counts under this code: 7 in 2023 vs 4 in 2024 (latest complete years).