Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications

Patent metadata

Field	Value
Publication number	US-10236365-B2
Application number	US-201815883935-A
Country	US
Kind code	B2
Filing date	Jan 30, 2018
Priority date	Feb 18, 2016
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.

First claim

What we claim is:

1. A homoepitaxial tunnel barrier transport device with hydrogenated graphene-on-graphene, comprising:
a substrate;
a monolayer graphene film;
wherein the monolayer graphene film has encapsulated edges formed by utilizing deep-UV lithography and a MMA/PMMA mask and sputter-depositing SiN wherein the SiN is about 10 nm; and
a chemically modified monolayer graphene film
wherein the chemically modified monolayer graphene film is a hydrogenated monolayer graphene film.

2. The homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene of claim 1 , wherein there is no electrical connection between the monolayer graphene film and the chemically modified monolayer graphene film.

3. A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the steps comprising growing graphene by chemical vapor deposition via decomposition of methane in a copper foil enclosure, removing the copper foil by etching, transferring and stacking graphene layers on a substrate, defining graphene mesas utilizing deep-UV lithography and an etch mask with PMMA and oxygen plasma, rinsing in acetone and isopropyl alcohol and removing the etch mask, defining reference contacts and bond pads, depositing Ti/Au using electron beam deposition, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MMA/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the graphene, and forming the homoepitaxial tunnel barrier.

4. The homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene of claim 3 wherein the step of transferring and stacking graphene layers on a substrate includes stacking 4 graphene layers and wherein after the step of hydrogenating a conductive channel is present in the layers.

5. A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the process comprising providing a multilayer stack of graphene having top layers and bottom layers, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MMA/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the top layers of graphene, and creating a homoepitaxial tunnel barrier.

Assignees

• Us Navy

Inventors

• Friedman Adam L
• Van 'T Erve Olaf M J
• Robinson Jeremy T
• Jonker Berend T
• Whitener Keith E

Classifications

• H10P95/92

  Formation of n- or p-type semiconductors, e.g. doping of graphene · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P14/3452

  Microstructure · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title