Shielding film for a light receiving element and optically coupled insulating device
US-2015380594-A1 · Dec 31, 2015 · US
US10050169B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10050169-B2 |
| Application number | US-201615131121-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 18, 2016 |
| Priority date | Apr 17, 2015 |
| Publication date | Aug 14, 2018 |
| Grant date | Aug 14, 2018 |
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A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.
Opening claim text (preview).
What is claimed is: 1. A stacked optocoupler component comprising: a transmitter component with a transmitting area, the transmitting area having a surface; a receiver component with a receiving area, the receiving area having a surface; an electrical isolator that is plate-shaped, the electrical isolator being formed between the transmitter component and the receiver component, and the transmitter component and receiver component and the electrical isolator being arranged one on top of another in a form of a stack, wherein the transmitter component and receiver component are galvanically separated from one another but optically coupled to one another, wherein the electrical isolator is transparent at least for a part of an emission wavelength of the transmitting area, wherein a centroidal axis of the surface of the transmitting area and a centroidal axis of the surface of the receiving area are substantially parallel to one another, wherein an offset between the two centroidal axes is less than half of a distance of either centroidal axis to an outer edge of the surface of the transmitting area or the receiving area so that light of the transmitter component acts predominantly or solely through the electrical isolator on the receiving area, wherein the electrical isolator projects on all sides from the stack to form a balcony, wherein the receiver component has a number N of partial voltage sources connected in series to one another, N being a natural number greater or equal to 2, wherein a deviation of the partial voltages of the individual partial voltage sources from one another is less than 20%, wherein each partial voltage source has a semiconductor diode with a p-n junction, wherein a tunnel diode is formed between each of two successive partial voltage sources, wherein the partial voltage sources and the tunnel diodes are monolithically integrated together, wherein light from the transmitter component is emitted parallel to the centroidal axis of the surface of the transmitting area, wherein the receiver component receives light directly from the transmitter component across the electrical isolator, wherein a transmitter electrical contact terminal is provided on the surface of the transmitting area, and a receiver electrical contact terminal is provided on the surface of the receiving area, and wherein the transmitter electrical contact terminal and the receiver electrical contact terminal are a strip or grid pattern covering less than 10% of the surface of the transmitting area and the surface of the receiving area. 2. The integrated optocoupler according to claim 1 , wherein a difference between a size of the surface of the transmitting area and a size of the surface of the receiving area is less than 20%. 3. A stacked optocoupler component comprising: a transmitter component with a transmitting area, the transmitting area having a surface; a receiver component with a receiving area, the receiving area having a surface; an electrical isolator that is plate-shaped, the electrical isolator being formed between the transmitter component and the receiver component, and the transmitter component and receiver component and the electrical isolator being arranged one on top of another in a form of a stack, wherein the transmitter component and receiver component are galvanically separated from one another but optically coupled to one another, wherein the electrical isolator is transparent at least for a part of an emission wavelength of the transmitting area, wherein a centroidal axis of the surface of the transmitting area and a centroidal axis of the surface of the receiving area are substantially parallel to one another, wherein an offset between the two centroidal axes is less than half of a distance of either centroidal axis to an outer edge of the surface of the transmitting area or the receiving area so that light of the transmitter component acts predominantly or solely through the electrical isolator on the receiving area, wherein the electrical isolator projects on all sides from the stack to form a balcony, wherein the receiver component has a number N of partial voltage sources connected in series to one another, N being a natural number greater or equal to 2, wherein a deviation of the partial voltages of the individual partial voltage sources from one another is less than 20%, wherein each partial voltage source has a semiconductor diode with a p-n junction, wherein a tunnel diode is formed between each of two successive partial voltage sources, wherein the partial voltage sources and the tunnel diodes are monolithically integrated together, wherein light from the transmitter component is emitted parallel to the centroidal axis of the surface of the transmitting area, wherein the receiver component receives light directly from the transmitter component across the electrical isolator, wherein a first transmitter electrical contact terminal is provided on a top side of the transmitter component opposite the surface of the transmitting area, and a second transmitter electrical contact terminal is provided on the surface of the transmitting area, wherein a first receiver electrical contact terminal is provided on the surface of the transmitting area, and a second receiver electrical contact terminal is provided on the surface of the receiving area, and wherein the second transmitter electrical contact terminal and the second receiver electrical contact terminal are a strip or grid pattern covering less than 10% of the surface of the transmitting area and the surface of the receiving area. 4. The integrated optocoupler according to claim 1 , wherein the surface of the transmitting area and the surface of the receiving area have a rectangular shape and a largest length from the surface of the transmitting area to the surface of the receiving area is less than 2 mm. 5. The integrated optocoupler according to claim 1 , wherein the stack comprising the transmitter component and the isolator and the receiver component is integrated into a mutual package. 6. The integrated optocoupler according to claim 1 , wherein the surface of the transmitting area and the surface of the receiving area are substantially equal in size and wherein the transmitting area emits light and the receiving area absorbs light. 7. The integrated optocoupler according to claim 1 , wherein the surface of the transmitting area and the surface of the receiving area are square and each has a base area larger than 0.2×0.2 mm 2 and smaller than 4 mm 2 . 8. The integrated optocoupler according to claim 1 , wherein the transmitter component has an optical mirror for the wavelength of the transmitter or an RCLED or a surface-emitting laser. 9. The integrated optocoupler according to claim 1 , wherein the plate-shaped isolator is formed of plastic or of glass or of aluminum dioxide or of epoxy resin or of silicone. 10. The integrated optocoupler according to claim 1 , wherein the isolator projects on all sides from the stack by at least 5 μm. 11. The integrated optocoupler according to claim 1 , wherein the thickness of the isolator is less than 0.5 mm but at least 50 μm. 12. The integrated optocoupler according to claim 1 , wherein the emission wavelength of the transmitting area is at most 10% lower than the absorption edge of the receiver area. 13. The integrated optocoupler according to claim 1 , wherein the transmitter component and receiver component are made of a III-V material. 14. The integrated optocoupler according to claim 1 , wherein the receiver component comprises a GaAs and/or a Ge substrate.
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