Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element
US-2019115431-A1 · Apr 18, 2019 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/15 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 130 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 19 |
| 2016 | 15 |
| 2017 | 12 |
| 2018 | 12 |
| 2019 | 14 |
| 2020 | 22 |
| 2021 | 8 |
| 2022 | 9 |
| 2023 | 4 |
| 2024 | 11 |
| 2025 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface
US-2019058059-A1 · Feb 21, 2019 · US
Iii-nitride tunnel junction with modified p-n interface
US-2018374699-A1 · Dec 27, 2018 · US
Semiconductor laser
US-2018375290-A1 · Dec 27, 2018 · US
Method for making dram with recessed channel array transistor (rcat) including a superlattice
US-2018358361-A1 · Dec 13, 2018 · US
Superlattice buffer structure for gallium nitride transistors
US-10109736-B2 · Oct 23, 2018 · US
III-Nitride transistor including a III-N depleting layer
US-10043896-B2 · Aug 7, 2018 · US
System and method for providing an electron blocking layer with doping control
US-10014439-B2 · Jul 3, 2018 · US
Method of obtaining planar semipolar gallium nitride surfaces
US-9978845-B2 · May 22, 2018 · US
Semiconductor Material Doping
US-2018108805-A1 · Apr 19, 2018 · US
Iii-nitride transistor including a iii-n depleting layer
US-2018102425-A1 · Apr 12, 2018 · US
Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
US-9935207-B2 · Apr 3, 2018 · US
Normally-off field effect transistor
US-9887267-B2 · Feb 6, 2018 · US
Solution-processed sol-gel films including a crystallization aid, devices including same, and methods
US-9859116-B2 · Jan 2, 2018 · US
III-nitride transistor including a p-type depleting layer
US-9842922-B2 · Dec 12, 2017 · US
Methods for forming photonic integrated circuits based on quantum cascade structures
US-9735549-B2 · Aug 15, 2017 · US
Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
US-2017229589-A1 · Aug 10, 2017 · US
Split-electrode vertical cavity optical device
US-2017221995-A1 · Aug 3, 2017 · US
Extreme high mobility CMOS logic
US-9691856-B2 · Jun 27, 2017 · US
Semiconductor material doping
US-9634183-B2 · Apr 25, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/15?
- CPC H01L29/15 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/15 (Electricity)?
- Our database includes 130 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/15 growing?
- Publication counts under this code: 11 in 2024 vs 4 in 2025 (latest complete years).