Methods for forming photonic integrated circuits based on quantum cascade structures

Patent metadata

Field	Value
Publication number	US-9735549-B2
Application number	US-201615221402-A
Country	US
Kind code	B2
Filing date	Jul 27, 2016
Priority date	Jul 26, 2012
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.

First claim

What is claimed is:

1. A method comprising:
forming an integrated multi-layer semiconductor structure including a wave confinement region comprising a quantum cascade layer, the quantum cascade layer within the wave confinement region having a density of free charge carriers sufficient to produce optical gain in the quantum cascade layer in a wavelength spectrum; and
configuring a portion of the wave confinement region to be a passive portion by substantially depleting the quantum cascade layer within the portion of the wave confinement region of free charge carriers to have low loss in the wavelength spectrum, a remaining portion of the wave confinement region other than the passive portion comprising an active portion of the wave confinement region.

2. The method of claim 1 , wherein substantially depleting the quantum cascade layer within the portion of the wave confinement region of free charge carriers comprises implanting ions into the layer.

3. The method of claim 2 , wherein implanting ions comprises implanting ions of at least one of Hydrogen, Helium, Oxygen, Iron, Chromium, Cobalt, Nickel, Titanium, Vanadium, Silicon, Sulfur, Selenium, Tellurium, Tin, Zinc, and Carbon.

4. The method of claim 1 , wherein substantially depleting the quantum cascade layer within the portion of the wave confinement region of free charge carriers comprises depleting the layer to a free charge carrier density less than about 10 15 cm −3 .

5. The method of claim 4 , wherein substantially depleting the quantum cascade layer within the portion of the wave confinement region of free charge carriers further comprises depleting the layer to a free charge carrier density less than about 10 10 cm −3 .

6. The method of claim 1 , wherein the multi-layer structure comprises an active portion and a passive portion, the active portion of the structure comprising the active portion of the wave confinement region, and wherein forming the multi-layer structure comprises configuring the active portion of the structure to include at least one of a laser, a distributed feedback laser, an amplifier, a master-oscillator power amplifier, a switch, a modulator, a phase shifter, and a detector.

7. The method of claim 1 , wherein the multi-layer structure comprises an active portion and a passive portion, the passive portion of the structure comprising the passive portion of the wave confinement region, the method further comprising configuring the passive portion of the multi-layer structure to include at least one of a waveguide, a router, a splitter, a combiner, a coupler, a phase shifter, a multiplexer, an interferometer, a filter, a modulator, a switch, and a resonator.

8. The method of claim 1 , wherein the wavelength spectrum is in the mid-infrared wavelength region.

9. The method of claim 1 , wherein the active portion of the wave confinement region is a first active portion and the density of free charge carriers is a first density, the method further comprising configuring an additional portion of the wave confinement region to be a second active portion by modifying the first density of free charge carriers in the quantum cascade layer within the second active portion of the wave confinement region to be a second density of free charge carriers sufficient to produce optical gain in the quantum cascade layer in the wavelength spectrum, the second density differing from the first density.

10. The method of claim 9 , wherein the first active portion is a laser and the second active portion is an amplifier.

11. A method comprising:
forming an integrated multi-layer semiconductor structure including a wave confinement region comprising a quantum cascade layer, the quantum cascade layer being substantially depleted of free charge carriers to have low loss in a wavelength spectrum; and
configuring a portion of the wave confinement region to be an active portion by increasing a density of free charge carriers in the quantum cascade layer in the portion of the wave confinement region to a value sufficient to produce optical gain in the quantum cascade layer in the wavelength spectrum, a remaining portion of the wave confinement region other than the active portion comprising a passive portion of the wave confinement region.

12. The method of claim 11 , wherein increasing the density of free charge carriers comprises implanting ions into the quantum cascade layer in the portion of the wave confinement region.

13. The method of claim 11 , wherein the multi-layer structure comprises an active portion and a passive portion, the passive portion of the structure comprising the passive portion of the wave confinement region, the method further comprising configuring the passive portion of the multi-layer structure to include at least one of a waveguide, a router, a splitter, a combiner, a coupler, a phase shifter, a multiplexer, an interferometer, a filter, a modulator, a switch, and a resonator.

14. The method of claim 11 , further comprising configuring an active portion of the multi-layer structure comprising the active portion of the wave confinement region to include at least one of a laser, a distributed feedback laser, an amplifier, a master-oscillator power amplifier, a switch, a modulator, a phase shifter, and a detector.

15. The method of claim 11 , wherein the active portion of the wave confinement region is a first active portion and the density of free charge carriers is a first density, the method further comprising configuring an additional portion of the wave confinement region to be a second active portion by increasing the first density in the quantum cascade layer in the second active portion to a second density of free charge carriers sufficient to produce optical gain in the quantum cascade layer in the wavelength spectrum, the second density differing from the first density.

16. The method of claim 15 , wherein the first active portion is a laser and the second active portion is an amplifier.

17. The method of claim 11 , wherein the wavelength spectrum is in the mid-infrared wavelength region.

Assignees

• Massachusetts Inst Technology
• Pendar Tech Llc

Inventors

• Goyal Anish K
• Diehl Laurent
• Pfluegl Christian
• Wang Christine A
• Witinski Mark Francis

Classifications

• H01S5/3013

  AIIIBV compounds · CPC title

• H01S5/2275

  mesa created by etching · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01L29/15

  Electricity · mapped topic

• H01S5/026

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title