Method for manufacturing a silicon carbide wafer using a susceptor having draining openings

Patent metadata

Field	Value
Publication number	US-10153207-B2
Application number	US-201615194309-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Dec 15, 2011
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

First claim

The invention claimed is:

1. A method, comprising:
positioning a crystalline substrate on a susceptor, the susceptor having a plurality of draining openings;
moving a gathering tank to a first position, the gathering tank including a plurality of protruding elements, the plurality of protruding elements extending in to the plurality of draining openings when the gathering tank is in the first position;
forming a first layer of a first material on the crystalline substrate by exposing the crystalline substrate to a flow of first material precursors, the first material having a first melting temperature, the crystalline substrate being of a second material having a second melting temperature that is lower than the first melting temperature;
melting the second material of the crystalline substrate using a first process temperature that is higher than the second melting temperature and lower than the first melting temperature;
forming a second layer of the first material on the first layer by exposing the first layer to the flow of first material precursors; and
moving the gathering tank to a second position, the gathering tank being spaced from the susceptor when the gathering tank is in the second position.

2. The method according to claim 1 , wherein forming the first layer and the second layer of the first material are carried out at a second process temperature that is lower than the second melting temperature.

3. The method according to claim 1 , wherein the first material is 3C polytype silicon carbide and the second material is crystalline silicon.

4. The method according to claim 2 , further comprising activating a surface of the crystalline substrate before exposing the crystalline substrate to the flow of first material precursors for forming the first layer, the activating being carried out at a third process temperature that is lower than the second process temperature.

5. The method according to claim 1 , wherein:
forming the first layer includes heteroepitaxially growing the first layer on the crystalline substrate, and
forming the second layer includes homoepitaxially growing the second layer on the first layer.

6. A method, comprising:
positioning a substrate of a first material on a susceptor having a plurality of draining openings;
moving a receptacle to a first position, the receptacle including a plurality of protruding elements, the plurality of protruding elements extending in to the plurality of draining openings when the receptacle is in the first position;
epitaxially growing a first layer of a second material on a surface of the substrate;
melting the substrate from the first layer;
epitaxially growing a second layer of the second material on the first layer; and
moving the receptacle to a second position, the receptacle being spaced from the susceptor when the receptacle is in the second position.

7. The method of claim 6 , wherein the first material is crystalline silicon and the second material is 3C polytype silicon carbide.

8. The method of claim 6 , wherein the susceptor is positioned in a chamber, and melting the substrate from the first layer includes heating the chamber to a first temperature that is between a melting temperature of the first material and a melting temperature of the second material.

9. The method of claim 6 , further comprising cooling the chamber to a temperature that is lower than a melting temperature of the first material after the substrate is melted from the first layer.

10. The method of claim 6 , further comprising exposing the substrate to hydrogen flow before epitaxially growing the first layer at a first temperature.

11. The method of claim 10 , further comprising adding a carbon precursor to the hydrogen flow at a second temperature that is larger than the first temperature.

12. A method, comprising:
positioning a substrate on a first platform, the first platform including lateral supports, a center portion, and a plurality of apertures in the center portion, the first platform overlying a second platform, the second platform including sidewalls;
positioning a receptacle in a first position, the receptacle abutting the center portion of the first platform when the receptacle is in the first position;
forming a first layer of a first material on the substrate;
melting the substrate while the first layer is being formed on the substrate;
forming a second layer of the first material on the first layer; and
positioning the receptacle in a second position, the receptacle being spaced from the center portion of the first platform and the lateral supports of the first platform resting on the sidewalls of the second platform when the receptacle is in the second position.

13. The method of claim 12 , wherein melting the substrate includes heating the first layer and the substrate to a temperature that is lower than a melting temperature of the first material and higher than a melting temperature of the substrate.

14. The method of claim 12 , further comprising cooling the melted substrate to a temperature that is lower than a melting temperature of the substrate.

15. The method according to claim 12 , wherein the first material is 3C polytype silicon carbide and the substrate is made of crystalline silicon.

16. The method of claim 12 , further comprising exposing the substrate to hydrogen flow before forming the first layer on the substrate.

17. The method of claim 16 , further comprising adding a carbon precursor to the hydrogen flow before forming the first layer on the substrate.

Assignees

• St Microelectronics Srl

Inventors

• Frisina Ferruccio
• Abbondanza Giuseppe

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P95/11 Primary

  Separation of active layers from substrates · CPC title

• C30B33/06

  Joining of crystals · CPC title