Method for producing nitride crystal

Patent metadata

Field	Value
Publication number	US-10041186-B2
Application number	US-201615238945-A
Country	US
Kind code	B2
Filing date	Aug 17, 2016
Priority date	Mar 10, 2014
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

First claim

The invention claimed is:

1. A method of producing a crystal of a nitride of a Group 13 element using a solution comprising a flux and a source material, the method comprising:
using a crucible containing said flux and said source material, a reaction vessel containing said crucible, an intermediate vessel containing said reaction vessel, and a pressure vessel containing said intermediate vessel and used to fill at least nitrogen gas; and
melting said flux and said source material by heating and introducing said nitrogen gas into said pressure vessel under a pressurized state, said nitrogen gas being supplied into said solution in said crucible through said intermediate vessel and said reaction vessel to grow said crystal of said nitride of said Group 13 element, wherein a vapor of an organic compound is supplied into a space outside of said reaction vessel and inside of said intermediate vessel, said organic compound having a molecular weight greater than that of nitrogen.

2. The method of claim 1 , wherein said organic compound is disposed in said space outside of said reaction vessel and inside of said intermediate vessel, and wherein said organic compound is evaporated by said heating to supply said vapor of said organic compound into said space outside of said reaction vessel and inside of said intermediate vessel.

3. The method of claim 1 , wherein said organic compound is in liquid state at a room temperature.

4. The method of claim 1 , wherein a plurality of said reaction vessels are placed in said intermediate vessel.

5. The method of claim 1 , wherein said organic compound comprises a hydrocarbon or a halogen-containing hydrocarbon.

6. The method of claim 1 , comprising providing a source of supplying said vapor of said organic compound outside of said pressure vessel and supplying said vapor into said pressure vessel with said nitrogen gas from said source to supply said vapor of said organic compound into said space outside of said reaction vessel and inside of said intermediate vessel.

Assignees

• Ngk Insulators Ltd

Inventors

• Imai Katsuhiro
• Iwai Makoto
• Sakai Masahiro
• Shimodaira Takanao
• Higashihara Shuhei
• Hirao Takayuki

Classifications

• C30B29/38

  Nitrides · CPC title

• C30B29/406

  Gallium nitride · CPC title

• C30B9/00

  Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00) · CPC title

• C30B9/12 Primary

  Salt solvents, e.g. flux growth · CPC title

• C30B9/06

  using as solvent a component of the crystal composition · CPC title